Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions

From LabAdviser
← Older editNewer edit →
VisualWikitext
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,324 edits
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,324 edits
Line 8: Line 8:
{| border="1" cellspacing="2" cellpadding="2"  
{| border="1" cellspacing="2" cellpadding="2"  
|-style="background:Black; color:White"
|-style="background:Black; color:White"
! Parameter
!|Recipe
|Recipe
!|Dep. rate [nm/min]
!|Dep. rate [nm/min]
!|RI
!|RI
Line 27: Line 26:
   
   
|-
|-
|Coil Power [W]
|MF SIN<!-- Recipe -->
|1300
|<!-- Dep. rate [nm/min] -->
|<!-- RI -->
|<!-- Unif. [%] -->
|<!-- Stress [MPa] -->
|<!-- Comments -->
|<!-- SiH4 [sccm] -->
|<!-- NH3 [sccm] -->
|<!-- N2O [sccm] -->
|<!-- N2 [sccm] -->
|<!-- Pressure [mTorr] -->
|<!-- Power [W] -->
|<!-- Load -->
|<!-- Tune -->
|<!-- Time [mm:ss] -->
|-
|-
|Platen Power [W]
|LF SIN<!-- Recipe -->
|200
|<!-- Dep. rate [nm/min] -->
|<!-- RI -->
|<!-- Unif. [%] -->
|<!-- Stress [MPa] -->
|<!-- Comments -->
|<!-- SiH4 [sccm] -->
|<!-- NH3 [sccm] -->
|<!-- N2O [sccm] -->
|<!-- N2 [sccm] -->
|<!-- Pressure [mTorr] -->
|<!-- Power [W] -->
|<!-- Load -->
|<!-- Tune -->
|<!-- Time [mm:ss] -->
|-
|-
|Platen temperature [<sup>o</sup>C]
|HF SiN <!-- Recipe -->
|0
|<!-- Dep. rate [nm/min] -->
|-
|<!-- RI -->
|He flow [sccm]
|<!-- Unif. [%] -->
|174
|<!-- Stress [MPa] -->
|-
|<!-- Comments -->
|C<sub>4</sub>F<sub>8</sub> flow [sccm]
|<!-- SiH4 [sccm] -->
|5
|<!-- NH3 [sccm] -->
|-
|<!-- N2O [sccm] -->
|H<sub>2</sub> flow [sccm]
|<!-- N2 [sccm] -->
|4
|<!-- Pressure [mTorr] -->
|-
|<!-- Power [W] -->
|Pressure [mTorr]
|<!-- Load -->
|4
|<!-- Tune -->
|<!-- Time [mm:ss] -->
|-
|-
|}
|}

Revision as of 08:09, 22 March 2017

Feedback to this page: click here


At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.

Deposition of SiN with PECVD4

Recipe Dep. rate [nm/min] RI Unif. [%] Stress [MPa] Comments SiH4 [sccm] NH3 [sccm] N2O [sccm] N2 [sccm] Pressure [mTorr] Power [W] Load Tune Time [mm:ss]


MF SIN
LF SIN
HF SiN



Recipes on PECVD2 for deposition of silicon nitride and silicon oxynitride

Recipes

Recipe name SiH4 flow [sccm] NH3 flow [sccm] N2 flow [sccm] Pressure [mTorr] Power [W] Description
SINSTD80 30 20 1000 500 80
SINSTD96 30 20 1000 500 96
1SiN 40 20 1000 700 150

Expected results

Recipe name Deposition rate [nm/min] RI Uniformity [%] Stress [MPa] BHF etch rate [Å/min] Comments
1SiN

Deposition rate in the middle of two wafers: 49nm/min+-1nm/min (2015-04-24 BGHE)
In the middel: 72.6-76.4 nm/min (2014-08-13 BGHE) Old shower head
Variation over 3 wafers: 71.4-78.6 nm/min (2014-08-13 BGHE) Old shower head

~2-4% (2015-04-24 BGHE)
~5% in the middel (4") (2014-08-13 BGHE) Old shower head
~10% over 3 wafers (2014-08-13 BGHE) Old shower head

SINSTD80 68nm/min (2014-07-07 JML)- unstable deposition rate
SINSTD96 - unstable deposition rate


Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride

Quality Controle (QC) for PECVD3
QC Recipe: QCNITRIDE
SiH4 flow 30 sccm
NH3 flow 30 sccm
N2 flow 1470 sccm
Pressure 845 mTorr
RF-power
  • HF: 100 W 7.8s
  • LF: 100 W 2.2s
QC limits PECVD3
Depoition rate ~40 nm/min
Non-uniformity <3.0 %
Refractive Index 2.02 - 2.04


Recipes

Recipe name SiH4 flow [sccm] NH3 flow [sccm] N2 flow [sccm] Pressure [mTorr] Power [W] Description
MFSiNLS2 30 30 1470 845 100HF 7.8s

100LF 2.2s

Low stress nitride - standard recipe. The latest measured values can be seen in the process control sheet in LabManager.
MFSiNLS 30 30 1470 650 20HF 6s

30LF 2s

Low stress nitride - old standard recipe. This one is not running well any more.
LFSiN 30 15 1470 550 60LF Compressive stress
HFSiN 30 42 1470 900 20HF Tensile stress

LF=Low Frequency HF=High Frequency MF=Mixed Frequency SiN=Silicon Nitride LS=Low Stress

Expected results

Recipe name Deposition rate [Å/min] RI Uniformity [%]
[Std./mean] 		Stress [MPa] KOH etch rate [Å/min] BHF etch rate [Å/min] See more
MFSiNLS2 ~422 (bghe Feb 2016) ~2.03 ~2 ~6 (bghe Feb 2016) ~2.1 (bghe Feb 2016) ~? see DOE
MFSiNLS ~107 ~1.99 ~4 ~-30 ~2.5 ~250 .
LFSiN ~550 ~1.96 ~3 ~-630 . . .
HFSiN ~130 ~1.97 ~2 ~460 . . .

Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride. Expired!:PECVD1 has been decommissioned

Recipes

Recipe name SiH4 flow [sccm] NH3 flow [sccm] N2 flow [sccm] Pressure [mTorr] Power [W] Description
1nitride 30 20 1000 500 80
1nit_std 40 20 1960 550 60 Process control recipe

Expected results

Recipe name Deposition rate [nm/min] RI Uniformity [%] Stress [MPa] BHF etch rate [Å/min] Comments
1nitride
1nit_std ~32 1.89 ~1 ~700 The latest measured values can be seen in the process control sheet in LabManager
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Nitride/Deposition_of_Silicon_Nitride_using_PECVD&oldid=26440"