Specific Process Knowledge/Thin film deposition: Difference between revisions
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[[/Lesker|Tantalum (Ta<sub>2</sub>O<sub>5</sub>, Tantalum pentoxide)]]<br/> | [[/Lesker|Tantalum (Ta<sub>2</sub>O<sub>5</sub>, Tantalum pentoxide)]]<br/> | ||
[[/Lesker|Cromia (Cr<sub>2</sub>O<sub>3</sub>, Chromium Oxide)]]<br/> | [[/Lesker|Cromia (Cr<sub>2</sub>O<sub>3</sub>, Chromium Oxide)]]<br/> | ||
[[/Deposition of Hafnium Oxide|Hafnium Oxide]]<br/> | |||
[[/Deposition of Titanium Nitride|Titanium Nitride]]<br/> | |||
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[[/Deposition of Silicon|Silicon]] <br/> | [[/Deposition of Silicon|Silicon]] <br/> |
Revision as of 08:29, 22 June 2017
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Choose material to deposit
Dielectrica | Semicondutors | Metals | Alloys | Transparent conductive oxides | Polymers |
Silicon Nitride - and oxynitride |
Aluminium |
TiW alloy (10%/90% by weight) |
ITO (Tin doped Indium Oxide) |
SU-8 |
Choose deposition equipment
PVD | LPCVD | PECVD | ALD | Coaters | Others
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See the Lithography/Coaters page for coating polymers |
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