Specific Process Knowledge/Etch/KOH Etch: Difference between revisions
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*:[http://kemibrug.dk/KBA/CAS/106882/?show_KBA=1&portaldesign=1 see KBA here] | *:[http://kemibrug.dk/KBA/CAS/106882/?show_KBA=1&portaldesign=1 see KBA here] | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan=" | !style="background:silver; color:black" align="center" valign="center" rowspan="6"|Performance | ||
|style="background:LightGrey; color:black"|Etch rates in crystalline silicon (100) | |style="background:LightGrey; color:black"|Etch rates in crystalline silicon (100) | ||
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*1.2 nm/min (60 °C) | *1.2 nm/min (60 °C) | ||
*6 nm/min (80 °C) | *6 nm/min (80 °C) | ||
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|style="background:LightGrey; color:black"|Etch rates in other oxides | |||
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yannickseis@nbi.ku nov. 2017 @80 °C: | |||
*BPSG from PECVD4: 311nm in about 3 min | |||
*Waveguide oxide from PECVD4: 320nm etched in 26 min | |||
*TEOS oxide from furnace: 300nm etched in 11 min | |||
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*Theoretical values: | |||
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|style="background:LightGrey; color:black"|Etch rates in SiN | |style="background:LightGrey; color:black"|Etch rates in SiN | ||