Specific Process Knowledge/Bonding/Wafer Bonder 02: Difference between revisions

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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
The Wafer bonder 02 is a system for bonding. 3 different types of [[Specific Process Knowledge/Bonding|bonding]] can be done: Anodic, Eutectic and Fusion. Furthermore it is possible to align the wafers one wishes to bond. It is also possible to process and align pieces.  
[[Image:EVG NIL.jpg|300x300px|thumb|EVG NIL: positioned in D-4]]
The EVG NIL is a system for imprinting in polymers (Hot embossing), and for bonding on wafer scale. 3 different types of [[Specific Process Knowledge/Bonding|bonding]] can be done: Anodic, Eutectic and Fusion. Furthermore it is possible to align the wafers one wishes to bond. In principle it is also possible to align the substrate and stamp before imprint, but it is much more difficult.
 
It is possible to fill bonded cavities with a desired gas. At the moment we have SF<sub>6</sub> on the system, but if you would like another one, please contact Rune Christiansen.  


'''The user manual, quality control procedure and results, user APV(s), and contact information can be found in LabManager:'''
'''The user manual, quality control procedure and results, user APV(s), and contact information can be found in LabManager:'''
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=153| LabManager]
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=366| LabManager]


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*[[Specific Process Knowledge/Imprinting|Imprinting]]
*[[Specific Process Knowledge/Imprinting|Imprinting]]


==Overview of the performance of the EVG NIL and some process related parameters==
==Overview of the performance of the Wafer Bonder 02 and some process related parameters==


{| border="2" cellspacing="0" cellpadding="10"  
{| border="2" cellspacing="0" cellpadding="10"  
|-
|-
!style="background:silver; color:black;" align="left"|Purpose  
!style="background:silver; color:black;" align="left"|Purpose  
|style="background:LightGrey; color:black"|Imprint and bonding
|style="background:LightGrey; color:black"|Bonding
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Eutectic bonding
*Eutectic bonding
*Fusion bonding
*Fusion bonding
*Anodic bonding
*Anodic bonding
*Imprinting
|-
|-
!style="background:silver; color:black" align="left"|Performance
!style="background:silver; color:black" align="left"|Performance
|style="background:LightGrey; color:black"|Alignment accuracy
|style="background:LightGrey; color:black"|Alignment accuracy
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*&plusmn; 5 microns for IR alignment
*&plusmn; 2 microns for IR alignment
*&plusmn; 10 microns for backside alignment
*&plusmn; 5 microns for backside alignment
|-
|-
|-
|-
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|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*~5<math>\cdot</math>10<sup>-4</sup>mbar - 2000mbar
*~5<math>\cdot</math>10<sup>-4</sup>mbar - 1000mbar
|-
|-
|style="background:LightGrey; color:black"|Piston Force
|style="background:LightGrey; color:black"|Piston Force
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Depending on the area, for 4" wafers 200-20000N.  
*Depending on the area, for 4" wafers 200-6000 mbar.  
|-
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*One 4" or 6" wafer per run
*One wafer per run
*Pieces are only allowed with speciel permission 
*Pieces  
|-
|-
| style="background:LightGrey; color:black"|Substrate material allowed
| style="background:LightGrey; color:black"|Substrate material allowed
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*Silicon (oxy)nitride
*Silicon (oxy)nitride
*Poly Silicon
*Poly Silicon
*Photoresist
*PMMA
*TOPAS
*SU-8
*Metals: Au, Sn, Ag, Al, Ti.
*Metals: Au, Sn, Ag, Al, Ti.
|-  
|-  
|}
|}

Revision as of 15:45, 18 May 2017

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The Wafer bonder 02 is a system for bonding. 3 different types of bonding can be done: Anodic, Eutectic and Fusion. Furthermore it is possible to align the wafers one wishes to bond. It is also possible to process and align pieces.

The user manual, quality control procedure and results, user APV(s), and contact information can be found in LabManager: Equipment info in LabManager


Process information

Types of Bonding


Imprint information

Overview of the performance of the Wafer Bonder 02 and some process related parameters

Purpose Bonding
  • Eutectic bonding
  • Fusion bonding
  • Anodic bonding
Performance Alignment accuracy
  • ± 2 microns for IR alignment
  • ± 5 microns for backside alignment
Process parameter range Process Temperature
  • Room temperature to 500C
Process pressure
  • ~510-4mbar - 1000mbar
Piston Force
  • Depending on the area, for 4" wafers 200-6000 mbar.
Substrates Batch size
  • One wafer per run
  • Pieces
Substrate material allowed
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
Material allowed on the substrate
  • Silicon oxide
  • Silicon (oxy)nitride
  • Poly Silicon
  • Metals: Au, Sn, Ag, Al, Ti.
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