Specific Process Knowledge/Etch/KOH Etch: Difference between revisions
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*0.4 µm/min (60 °C) | *0.4 µm/min (60 °C) | ||
*0.7 µm/min (70 °C) | |||
*1.3 µm/min (80 °C) | *1.3 µm/min (80 °C) | ||
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* | *0.4 µm/min (60 °C) | ||
*0.7 µm/min (70 °C) | |||
*1.3 µm/min (80 °C) | |||
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|style="background:LightGrey; color:black"|Etch rates in Thermal SiO2 | |style="background:LightGrey; color:black"|Etch rates in Thermal SiO2 | ||
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*6 nm/min (80 °C) | *6 nm/min (80 °C) | ||
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*Theoretical values: | |||
*1.2 nm/min (60 °C) | |||
*6 nm/min (80 °C) | |||
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*Theoretical values: | |||
*1.2 nm/min (60 °C) | |||
*6 nm/min (80 °C) | |||
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|style="background:LightGrey; color:black"|Etch rates in SiN | |style="background:LightGrey; color:black"|Etch rates in SiN | ||
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|style="background:LightGrey; color:black"|Roughness | |style="background:LightGrey; color:black"|Roughness | ||
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*Typical: 100-600 Å | |||
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*Typical: 100-600 Å | *Typical: 100-600 Å | ||
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*May be high due to contamination and poor controlled concentration of the KOH solution | *May be high due to contamination and poor controlled concentration of the KOH solution | ||
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|style="background:LightGrey; color:black"|Anisotropy | |style="background:LightGrey; color:black"|Anisotropy | ||
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|style="background:LightGrey; color:black"|Size of substrate | |style="background:LightGrey; color:black"|Size of substrate | ||
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*4” wafers | *4”-6" wafers | ||
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*4” wafers | *4”-6" wafers | ||
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*2” wafers | *2” wafers | ||
*4” wafers | *4” wafers | ||
*6” wafers | |||
*Small pieces | *Small pieces | ||
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