Specific Process Knowledge/Etch/KOH Etch: Difference between revisions
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!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | !colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | ||
|style="background:WhiteSmoke; color:black"|<b>KOH2</b> | |style="background:WhiteSmoke; color:black"|<b>KOH2</b> | ||
|style="background:WhiteSmoke; color:black"|<b>KOH1</b> | |style="background:WhiteSmoke; color:black"|<b>KOH1</b> | ||
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!style="background:silver; color:black;" align="center" width="60" rowspan="2"|Purpose | !style="background:silver; color:black;" align="center" width="60" rowspan="2"|Purpose | ||
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*Etch of Silicon in 28 wt% KOH | *Etch of Silicon in 28 wt% KOH | ||
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|style="background:LightGrey; color:black"|Link to safety APV and KBA | |style="background:LightGrey; color:black"|Link to safety APV and KBA | ||
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*:[http://labmanager.danchip.dtu.dk/d4Show.php?id=1906&mach=49 see APV here] | *:[http://labmanager.danchip.dtu.dk/d4Show.php?id=1906&mach=49 see APV here] | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="5"|Performance | !style="background:silver; color:black" align="center" valign="center" rowspan="5"|Performance | ||
|style="background:LightGrey; color:black"|Etch rates in crystalline silicon (100) | |style="background:LightGrey; color:black"|Etch rates in crystalline silicon (100) | ||
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*0.4 µm/min (60 °C) | *0.4 µm/min (60 °C) | ||
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|style="background:LightGrey; color:black"|Etch rates in Thermal SiO2 | |style="background:LightGrey; color:black"|Etch rates in Thermal SiO2 | ||
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*Theoretical values: | *Theoretical values: | ||
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|style="background:LightGrey; color:black"|Etch rates in SiN | |style="background:LightGrey; color:black"|Etch rates in SiN | ||
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|style="background:LightGrey; color:black"|Roughness | |style="background:LightGrey; color:black"|Roughness | ||
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*Typical: 100-600 Å | *Typical: 100-600 Å | ||
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|style="background:LightGrey; color:black"|Anisotropy | |style="background:LightGrey; color:black"|Anisotropy | ||
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*The etch rate is very dependent on the crystal orientation of the silicon. | *The etch rate is very dependent on the crystal orientation of the silicon. | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range | ||
|style="background:LightGrey; color:black"|Chemical solution | |style="background:LightGrey; color:black"|Chemical solution | ||
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*Mixing ratios giving 28 wt% KOH solutions | *Mixing ratios giving 28 wt% KOH solutions | ||
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|style="background:LightGrey; color:black"|Temperature | |style="background:LightGrey; color:black"|Temperature | ||
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*Max 80 °C (standard etch) | *Max 80 °C (standard etch) | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="4"|Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
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*1-25 wafers at a time | *1-25 wafers at a time | ||
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|style="background:LightGrey; color:black"|Size of substrate | |style="background:LightGrey; color:black"|Size of substrate | ||
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*4” wafers | *4” wafers | ||
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|style="background:LightGrey; color:black"|Allowed materials | |style="background:LightGrey; color:black"|Allowed materials | ||
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*Silicon | *Silicon | ||
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|style="background:LightGrey; color:black"|Masking material | |style="background:LightGrey; color:black"|Masking material | ||
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*Stoichiometric Si3N4 | *Stoichiometric Si3N4 | ||