Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions
| Line 88: | Line 88: | ||
!Etch rate range | !Etch rate range | ||
| | | | ||
*Si<sub>3</sub>N<sub>4</sub> @ 160 <sup>o</sup>C: ~ | *Si<sub>3</sub>N<sub>4</sub> @ 160 <sup>o</sup>C: ~26 Å/min | ||
| | | | ||
*PECVD nitride: ~400-1000 Å/min | *PECVD nitride: ~400-1000 Å/min | ||
| Line 108: | Line 108: | ||
!Substrate size | !Substrate size | ||
| | | | ||
*<nowiki>#</nowiki>1-25 | *<nowiki>#</nowiki>1-25 4" and 6" wafers | ||
| | | | ||
*<nowiki>#</nowiki>1-25 | *<nowiki>#</nowiki>1-25 4"-6" wafers | ||
| | | | ||
*As many small samples as can be fitted on the 100mm carrier. | *As many small samples as can be fitted on the 100mm carrier. | ||