Specific Process Knowledge/Characterization/SEM LEO: Difference between revisions

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*[[Specific Process Knowledge/Lithography/EBeamLithography/RaithElphy|Raith Elphy e-beam lithography system]]
*[[Specific Process Knowledge/Lithography/EBeamLithography/RaithElphy|Raith Elphy e-beam lithography system]]


===Typical current values===
===Typical current values for EBL===
Reported values are the average of five measurements from Elphy Quantum using the EBL holder's Faraday cup. All values in pA.
Reported values are the average of five measurements from Elphy Quantum using the EBL holder's Faraday cup. All values in pA.



Revision as of 14:50, 11 February 2017

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SEM LEO

The SEM LEO located in cleanroom F-2

The SEM LEO is a scanning electron microscope. It is a very reliable and rugged instrument that provides high quality SEM images of most samples, and it has excellently served the users of the cleanroom for many years. Excellent images on a large variety of materials such as semiconductors, semiconductor oxides or nitrides, metals, thin films and some polymers may be acquired on the SEM.

However, the SEM LEO has now been equipped with a Raith e-beam lithography system, and from the turn of the year 2015-2016 it is exclusively dedicated to the users of the Raith E-beam lithography, so general imaging of user samples is no longer allowed.

The SEM LEO is located in the cleanroom. It was installed in 1998, and the software was ungraded in 2012.


The user manual, control instruction, the user APV and contact information can be found in LabManager:

SEM LEO info page in LabManager,


Performance information

Typical current values for EBL

Reported values are the average of five measurements from Elphy Quantum using the EBL holder's Faraday cup. All values in pA.

LEO - Current measurements 11/02/2017
  5kV 10kV 15kV 20kV
10um 13 17 20.5 25
20um 62 87 105 127
30um 160 175 215 264
60um 510 680 850 1040

Equipment performance

Equipment SEM LEO (Leo 1550 SEM)
Purpose Imaging and measurement of
  • Conducting samples
  • Semi-conducting samples
  • Thin (~ 5 µm <) layers of non-conducting materials such as polymers
Other purpose
  • E-beam lithography using Raith Elphy Quantum system
Location
  • Cleanroom of DTU Danchip
Performance Resolution
  • ~ 5 nm (limited by vibrations)

The resolution is strongly dependent on the type of sample and the skills of the operator.

Instrument specifics Detectors
  • Secondary electron (Se2)
  • Inlens secondary electron (Inlens)
  • Backscatter electron (BSD)
Stage
  • X, Y: 125 × 100 mm
  • T: 0 to 90o
  • R: 360o
  • Z: 48 mm
Electron source
  • FEG (Field Emission Gun) source
Operating pressures
  • Fixed at High vacuum (2 × 10-5mbar - 10-6mbar)
Options
  • Raith Elphy Quantum E-Beam Litography system
Substrates Batch size
  • Wafers up to 6" (only full view up to 4")
Allowed materials
  • Any standard cleanroom materials.