Specific Process Knowledge/Direct Structure Definition: Difference between revisions

From LabAdviser
Bghe (talk | contribs)
Bghe (talk | contribs)
Line 49: Line 49:
!  
!  
![[Specific Process Knowledge/Lithography/UVLithography|UV Lithography]]
![[Specific Process Knowledge/Lithography/UVLithography|UV Lithography]]
![[Specific Process Knowledge/Lithography/3DLithography|2-Photon Polymerization Lithography]]
![[Specific Process Knowledge/Lithography/NanoImprintLithography|Nano Imprint Lithography]]
![[Specific Process Knowledge/Lithography/NanoImprintLithography|Nano Imprint Lithography]]
![[Specific Process Knowledge/Back-end processing/Polymer Injection Molder|Polymer Injection Molder]]
![[Specific Process Knowledge/Back-end processing/Polymer Injection Molder|Polymer Injection Molder]]
Line 60: Line 59:
!General description
!General description
| The device is typical made in a thick film (10-100µm thick) of a polymer (SU-8) that is spun on a carrier (silicon wafer). This film is exposed through a mask and then developed and possible cured to make the polymer harder.
| The device is typical made in a thick film (10-100µm thick) of a polymer (SU-8) that is spun on a carrier (silicon wafer). This film is exposed through a mask and then developed and possible cured to make the polymer harder.
| The device is typical made in a thick film (1-10µm thick) of a polymer (SU-8) that is spun on a carrier (silicon wafer). This film is exposed by two intersecting laser beams in the system. Where the beams intersect the film polymerize and becomes less solvable. It is possible to form very small 3D structures
| The device is typical made in a thick film (1-10µm thick) of a polymer that is spun on a carrier (silicon wafer). A master with the desired pattern is pressed into this film and the film is hardened by heating or UV-exposure. A residual layer has to be etched away by dry etching. It is possible to form very small 2½D structures over large areas relative fast.
| The device is typical made in a thick film (1-10µm thick) of a polymer that is spun on a carrier (silicon wafer). A master with the desired pattern is pressed into this film and the film is hardened by heating or UV-exposure. A residual layer has to be etched away by dry etching. It is possible to form very small 2½D structures over large areas relative fast.
| The device is typically made in Topas, PP, PE, PS or a similar polymer. A master disk, called a shim, is usually fabricated in nickel or special aluminium alloys with the desired structures to be replicated. It is mounted in the tool of the injection moulding machine. Together they form a cavity into which molten polymer is injected. It is possible to replicate both small and large 2½D structures relatively fast. Many plastic items are made by injection molding, from toothbrushes and car bumpers to LEGO building blocks.
| The device is typically made in Topas, PP, PE, PS or a similar polymer. A master disk, called a shim, is usually fabricated in nickel or special aluminium alloys with the desired structures to be replicated. It is mounted in the tool of the injection moulding machine. Together they form a cavity into which molten polymer is injected. It is possible to replicate both small and large 2½D structures relatively fast. Many plastic items are made by injection molding, from toothbrushes and car bumpers to LEGO building blocks.
Line 71: Line 69:
!Typical used for
!Typical used for
|Optical waveguides, fluidic systems (master for PDMS/soft lithography)
|Optical waveguides, fluidic systems (master for PDMS/soft lithography)
|Photonic bandgap structures
|??
|??
|Fluidic devices, optical waveguides, surface modification.
|Fluidic devices, optical waveguides, surface modification.
Line 82: Line 79:
!Processable materials
!Processable materials
|  
|  
*SU8
*AZ resists
|
*SU8
*SU8
*AZ resists
*AZ resists
Line 111: Line 105:
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Prerequisites
!Prerequisites
|Sample with resist.<br> A glass mask with desired pattern. For mask layout software see [[Specific Process Knowledge/Lithography/UVLithography/Mask Design| Mask design]]
|Sample with resist.<br> A glass mask with desired pattern. For mask layout software see [[Specific Process Knowledge/Lithography/UVLithography/Mask Design| Mask design]]  
|Sample with resist.<br> A 3D CAD model file in GWL format. Included software can convert 3D model in STL (Standard Tessellation Language) format to GWL files.
|Sample with polymer.<br> A stamp with the wanted pattern, usually in Si or SiO\rm{_2} however other materials could also be used.  
|Sample with polymer.<br> A stamp with the wanted pattern, usually in Si or SiO\rm{_2} however other materials could also be used.  
|A stamp/shim with the wanted pattern, usually in Ni or Al, cut out to fit in the injection moulding machine.
|A stamp/shim with the wanted pattern, usually in Ni or Al, cut out to fit in the injection moulding machine.
Line 123: Line 116:
!Throughput (when mask/stamp/pattern available)
!Throughput (when mask/stamp/pattern available)
|medium: 5-10 wafers/hour depending on exposure time
|medium: 5-10 wafers/hour depending on exposure time
|slow: 1 sample/day
|medium: 5-10 wafers/hour depending on imprint time
|medium: 5-10 wafers/hour depending on imprint time
|fast: 10-200/hour
|fast: 10-200/hour
Line 134: Line 126:
!Min/max featuresize
!Min/max featuresize
|1µm - wafer size
|1µm - wafer size
|100nm - mm
|100nm - µm
|100nm - µm
|nm - mm
|nm - mm
Line 145: Line 136:
!Post-treatment
!Post-treatment
|resist developing/baking
|resist developing/baking
|resist developing/baking, ?? 2-Photon Polymerization Lithography
|Dry Etch back (RIE), ?? Nano Imprint Lithography
|Dry Etch back (RIE), ?? Nano Imprint Lithography
|Sprue/runner has to be broken or cut off.
|Sprue/runner has to be broken or cut off.
Line 156: Line 146:
!Patterning degree of freedom
!Patterning degree of freedom
|2D
|2D
|3D
|2D. different depths possible
|2D. different depths possible
|2D. Different depths possible.
|2D. Different depths possible.
Line 171: Line 160:
*100 mm wafers
*100 mm wafers
*150 mm wafers
*150 mm wafers
|
*small samples
*50 mm wafers
*100 mm wafers
*150 mm wafers
|
|
*small samples
*small samples
Line 201: Line 185:
!Allowed materials
!Allowed materials
|Depending on tool used
|Depending on tool used
|Silicon wafers, Cover slips
|Nano Imprint Lithography
|Nano Imprint Lithography
|Nickel, aluminium, steel, FDTS
|Nickel, aluminium, steel, FDTS

Revision as of 16:03, 2 February 2017

Feedback to this page: click here


Direct Structure Definiton

Define the structure directly on your sample
Define the structure directly on your sample

By direct structure definition we mean that you form the structures for you device directly in the material that the device consist of without any masking steps. Some of the techniques may require a master.


Choose method of structuring/equipment


Comparison of equipment/material

UV Lithography Nano Imprint Lithography Polymer Injection Molder Laser Micromachining Tool Dicing saw
General description The device is typical made in a thick film (10-100µm thick) of a polymer (SU-8) that is spun on a carrier (silicon wafer). This film is exposed through a mask and then developed and possible cured to make the polymer harder. The device is typical made in a thick film (1-10µm thick) of a polymer that is spun on a carrier (silicon wafer). A master with the desired pattern is pressed into this film and the film is hardened by heating or UV-exposure. A residual layer has to be etched away by dry etching. It is possible to form very small 2½D structures over large areas relative fast. The device is typically made in Topas, PP, PE, PS or a similar polymer. A master disk, called a shim, is usually fabricated in nickel or special aluminium alloys with the desired structures to be replicated. It is mounted in the tool of the injection moulding machine. Together they form a cavity into which molten polymer is injected. It is possible to replicate both small and large 2½D structures relatively fast. Many plastic items are made by injection molding, from toothbrushes and car bumpers to LEGO building blocks. The device is made using a series of short, high intensity light pulses to engrave a pattern in almost any material. Since the light pulses are very short (100ns or 10ps) the heating of the sample can be minimized, and material can be removed without any further sample deformation/melting. The dicing saw is mostly used to seperate a silicon/glass wafer into individual chips. It can however also be used to make straight channels in glass/fused silica for e.g. fluidic components.
Typical used for Optical waveguides, fluidic systems (master for PDMS/soft lithography) ?? Fluidic devices, optical waveguides, surface modification. Cutting Silicon and glass wafers in odd shapes, shim cutting, shim patterning, surface modification, hole drilling in glass/silicon etc. Cutting Silicon and glass wafers in rectangular shapes, making straight channels in glass wafers.
Processable materials
  • SU8
  • AZ resists
  • TOPAS
  • PMMA
  • Topas 5013L-10
  • Topas 8007S-04
  • PS (BASF 158k)
  • Others available upon request and approval
  • Silicon
  • Metal sheets
  • Graphene (on silicon)
  • Glass (Pyrex, fused silica)
  • TOPAS
  • PMMA
  • ...
  • Silicon
  • Glass (Pyrex, fused silica)
Prerequisites Sample with resist.
A glass mask with desired pattern. For mask layout software see Mask design
Sample with polymer.
A stamp with the wanted pattern, usually in Si or SiO\rm{_2} however other materials could also be used.
A stamp/shim with the wanted pattern, usually in Ni or Al, cut out to fit in the injection moulding machine. A 2D CAD model file in DXF or CONX format. Clewin5 can convert GDS and CIF files to DXF format. Number of lines and pitch in each direction. Your wafer.
Throughput (when mask/stamp/pattern available) medium: 5-10 wafers/hour depending on exposure time medium: 5-10 wafers/hour depending on imprint time fast: 10-200/hour medium-slow: 0.1-1 wafers/hour depending on pattern complexity medium: ½-3 wafers/hour depending on material and # of cuts (Si cuts at 5mm/s, SiO2 at 0.5-1 mm/s)
Min/max featuresize 1µm - wafer size 100nm - µm nm - mm 100µm - wafer size saw blade width 60µm or 200µm. Has to cut full diameter of wafer.
Post-treatment resist developing/baking Dry Etch back (RIE), ?? Nano Imprint Lithography Sprue/runner has to be broken or cut off. Sample cleaning with Ultrasound etc. None
Patterning degree of freedom 2D 2D. different depths possible 2D. Different depths possible. 2D. different depths possible 1D. different depths possible
Sample sizes
  • small samples
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • small samples
  • 50 mm wafers
  • 100 mm wafers
  • Flat disk tool: ø50mm disc
  • Luer tool: ø50mm disc with 12 Luer connectors
  • Microscope slide tool: 26x76 mm2
  • small samples
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • larger samples
  • small samples
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials Depending on tool used Nano Imprint Lithography Nickel, aluminium, steel, FDTS Almost any Silicon, glass, GaN, bonded wafers, LiNbO3