Revision as of 12:27, 30 January 2017

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AZO can be deposited by Sputtering process and atomic layer deposition (ALD). In the chart below you can compare the different deposition equipment.

	Sputtering deposition (Lesker)	Atomic layer deposition (ALD Picosun R200)
General description	Sputter deposition of AZO	Atomic layer deposition of AZO
Pre-clean	RF Ar clean
Layer thickness	10Å to 5000Å*
Deposition rate	2Å/s to 15Å/s
Batch size	Up to 1x4" wafers smaller pieces	Pieces or 1x4" wafer or 1x6" wafer
Allowed materials	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals	Silicon Silicon oxide Silicon nitride Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals Carbon
Comment

* For thicknesses above 200 nm permission is required.

@@ Line 23: / Line 23: @@
 ! Pre-clean
 |RF Ar clean
-|RF Ar clean
+|
 |-
 |-style="background:WhiteSmoke; color:black"
 ! Layer thickness
-|10Å to 1µm*
+|10Å to 5000Å*
-|10Å to
+|
 |-
 |-style="background:LightGrey; color:black"
 ! Deposition rate
 |2Å/s to 15Å/s
-|~0.3Å/s
+|
 |-
 |-style="background:WhiteSmoke; color:black"