Specific Process Knowledge/Thin film deposition/MVD: Difference between revisions

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; Substrate surface
; Substrate surface
: A O<sub>2</sub> plasma is run prior to any process in order to  
: A O<sub>2</sub> plasma is run prior to any process in order to condition the substrate surface. This will also remove any existing MVD coating.
condition the substrate surface. This will also remove any existing MVD coating.


; Water content
; Water content

Revision as of 16:36, 3 April 2008

The Molecular Vapor Deposition Tool

The MVD is located in cleanroom 1

The Applied Microstructures MVD 100 system deposits molecular films on surfaces. These films serve a wide range of purposes ranging from antistiction coatings of nanoimprint lithography stamps to protecting MEMS structures. At Danchip the MVD is essential for nanoimprint lithography.

Processing on the MVD

The MVD coatings are created as self-assembled monolayers on a surface when a molecular vapor of chemials is present.

These chemicals, typically it is flourinated organosilanes, have a teflon-like tail consisting of -(CF2)xCF3 and, in the other end, a reactive group -Si(teflon)Clx. As shown in the figure below, the chlorine atoms react with -OH groups of the surface to form a chemical bond -Si((teflon))-O-Si(surface)- under elimination of HCL. This means that both Si and SiO2 surfaces are coated because of the native oxide on Si surfaces.

The parameters of the MVD process

The most important parameters to control during the MVD process are:

Substrate surface
A O2 plasma is run prior to any process in order to condition the substrate surface. This will also remove any existing MVD coating.
Water content
Water will cause the chemicals to polymerize (bond to each other instead of on the surface) and it is therefore critical to precisely control the water content.
The flat recipe
O2 plasma Flow 200 sccm
Power 250 Watts
Time 300 seconds
Chemical # 1 (vapor order 1) Name FDTS
Line no. 3
Cycles 4
Pressure 0.500 Torr
Chemical # 2 (vapor order 2) Name Water
Line no. 1
Cycles 1
Pressure 18 Torr
Processing Time 900 seconds
Purge Cycles 5