Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions
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|'''~0.9''' (SiO2:resist) | |'''~0.9''' (SiO2:resist) | ||
|'''~1.25:1 (Barc:KRF) | |'''~1.25:1 (Barc:KRF) | ||
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|Etch rate in silicon | |||
| | |||
bghe@Nanolab 20190117 | |||
*33.8 nm/min (middle of wafer with 80% load) bghe@Nanolab 20190117 | |||
*34.3 nm/min (edge of wafer with 80% load) | |||
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|- | |- | ||
|Wafer uniformity (100mm) | |Wafer uniformity (100mm) | ||