Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal: Difference between revisions

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 =<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
+{| border="1" cellspacing="2" cellpadding="2"
+|-style="background:Black; color:White"
+! Parameter
+|Recipe name: '''SiO2_res''' ('''SiO2''' etch with '''res'''ist mask)
+|-
+|Coil Power [W]
+|1300
+|-
+|Platen Power [W]
+|200
+|-
+|Platen temperature [<sup>o</sup>C]
+|0
+|-
+|He flow [sccm]
+|174
+|-
+|C<sub>4</sub>F<sub>8</sub> flow [sccm]
+|5
+|-
+|H<sub>2</sub> flow [sccm]
+|4
+|-
+|Pressure [mTorr]
+|4
+|-
+|}
+===Etch rates in different materials using the standard "Silicon oxide etch with resist mask" ===
+{| border="2" cellspacing="2" cellpadding="3"
+|-style="background:DarkGray; color:White"
+!Material to be etched
+!Etch rate using SiO2_res
+|-
+|Thermal oxide
+|
+*'''~230nm/min (5% etch load)''' -  etch load dependency [[/AOE SiO2 etch load dependency|'''see here''']]
+*200 nm/min ''fall 2016 by Martin Lind Ommen @nanotech''
+|-
+|TEOS oxide (5% load)
+|'''233nm/min &plusmn;0.7%''' - "&plusmn;" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 ''by LN/BGE@danchip''
+|-
+|PECVD1 (standard) oxide (5% load)
+|'''242nm/min &plusmn;0.6%''' - "&plusmn;" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 by ''LN/BGE@danchip''
+|-
+|Al2O3 from the ALD
+|
+*34.2 nm/min (1:6 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
+*50nm can be etched in 10min - [[/Etch of Al2O3|'''See results here''']] etched in November 2014 by ''FRSTO@danchip''
+|-
+|Silicon rich nitride from furnace B2
+|136nm was etched in 1min (whole wafer) - etched in October 2015 by ''bghe@danchip''
+|-
+|Cr
+|6 nm/min (1:33 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
+|-
+|Al
+|18nm/min (1:11 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
+|-
+|}
+<br clear="all" />