Specific Process Knowledge/Etch/III-V ICP/GaN: Difference between revisions
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|~ 90 <sup>o</sup> | |~ 90 <sup>o</sup> | ||
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{| border="1" cellspacing="2" cellpadding="3" align="left" | |||
|colspan="2" align="center"| '''Results (GaN Etch for Si check)''' | |||
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|Si etch rate | |||
|~200 nm/min (bghe 2017-01-17) full 4" wafer | |||
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