Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions
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|s007467 (as 18) | |||
|<!-- '''Mask material''' --> 750nm KRF | |||
|<!-- '''Barc etch''' --> none | |||
|<!-- '''Coil power''' --> 1000W | |||
|<!--'''Platen power'''--> 150W | |||
|<!--'''Pressure'''--> 2.5mTorr | |||
|<!--'''Flow rate C4F8'''--> 8sccm | |||
|<!--'''Flow rate H2'''--> 30sccm | |||
|<!--'''Flow rate Ar'''-->0 | |||
|<!--'''T'''--> 0 | |||
|<!--'''Process time'''--> 10min | |||
|<!--'''Comment'''--> | |||
|<!--'''Results'''--> | |||
[[File:ICP metal s007467_07.jpg|100px|frameless]] [[File:ICP metal s007467_09.jpg|100px|frameless]] | |||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |||
trench opening as a fraction of pitch--> | |||
? (2µm pitch)<br> | |||
52% (average) (3µm pitch)<br> | |||
51% (average) (6µm pitch)<br> | |||
|<!--'''Profile angles'''--> | |||
77 (6µm p) | |||
|<!--'''Etch depth in SiO2'''--> | |||
1015 nm (2µm pitch)<br> | |||
1032 nm (3µm pitch)<br> | |||
1060 nm (6µm pitch)<br> | |||
|<!--'''Etch rate'''--> | |||
101.5 nm/min (2µm pitch)<br> | |||
103.2 nm/min (3µm pitch)<br> | |||
106.0 nm/min (6µm pitch)<br> | |||
|<!--'''Etch depth in resist'''--> | |||
210nm | |||
|<!--'''Selectivity (resist:SiO2)'''--> | |||
1:4.8 (2µm pitch)<br> | |||
1:4.9 (3µm pitch)<br> | |||
1:5.0 (6µm pitch)<br> | |||
|<!--'''Etch rate in Si'''--> | |||
|- | |||
|s007418 | |||
|<!-- '''Mask material''' --> 750nm KRF | |||
|<!-- '''Barc etch''' --> none | |||
|<!-- '''Coil power''' --> 1000W | |||
|<!--'''Platen power'''--> 150W | |||
|<!--'''Pressure'''--> 2.5mTorr | |||
|<!--'''Flow rate C4F8'''--> 8sccm | |||
|<!--'''Flow rate H2'''--> 30sccm | |||
|<!--'''Flow rate Ar'''-->0 | |||
|<!--'''T'''--> 0 | |||
|<!--'''Process time'''--> 5min | |||
|<!--'''Comment'''--> | |||
|<!--'''Results'''--> | |||
[[File:ICP metal s007418_09.jpg|100px|frameless]] [[File:ICP metal s007418_12.jpg|100px|frameless]] | |||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |||
trench opening as a fraction of pitch--> | |||
46.5% (2µm pitch)<br> | |||
49.0% (4µm pitch)<br> | |||
|<!--'''Profile angles'''--> | |||
87-88 (large structures) | |||
|<!--'''Etch depth in SiO2'''--> | |||
400 nm (6µm pitch)<br> | |||
|<!--'''Etch rate'''--> | |||
80 nm/min (6µm pitch)<br> | |||
|<!--'''Etch depth in resist'''--> | |||
200nm/76nm? | |||
|<!--'''Selectivity (resist:SiO2)'''--> | |||
1:2 (6µm pitch)<br> | |||
1:5? | |||
|<!--'''Etch rate in Si'''--> | |||
|- | |- | ||
|s007565 (as 16) | |s007565 (as 16) | ||