Specific Process Knowledge/Thin film deposition/MVD: Difference between revisions
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! rowspan="3" align="center"| | ! rowspan="3" align="center"| Chemical # 1 (vapor order 1) | ||
! rowspan="3" align="center"| Chemical # 2 (vapor order 2) | |||
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! Parameter | ! Parameter |
Revision as of 16:21, 2 April 2008
The Molecular Vapor Deposition Tool
The Applied Microstructures MVD 100 system deposits molecular films on surfaces. These films serve a wide range of purposes ranging from antistiction coatings of nanoimprint lithography stamps to protecting MEMS structures. They are created as self-assembled monolayers on a surface when a molecular vapor of chemials is present. In most cases the chlorine atoms in the end of an flourinated organosilane react with -OH groups of the surface to form a chemical bond under elimination of HCL.
Common parameters | Multiplexed parameters | |||
---|---|---|---|---|
Parameter | Setting | Parameter | Etch | Passivation |
Temperature | 10oC | SF6 Flow | 260 sccm | 0 sccm |
No. of cycles | 31 | O2 Flow | 26 sccm | 0 sccm |
Process time | 5:56 mins | C4F4 Flow | 0 sccm | 120 sccm |
APC mode | manual | RF coil | 2800 W | 1000 W |
APC setting | 86.8 % | RF Platen | 16 W | 0 W |
Cycle time | 6.5 s | 5 s |
O2 plasma | Chemical # 1 (vapor order 1) | Chemical # 2 (vapor order 2) | Processing | |
---|---|---|---|---|
Flow | Setting | Parameter | Etch | Passivation |
Temperature | 10oC | SF6 Flow | 260 sccm | 0 sccm |
No. of cycles | 31 | O2 Flow | 26 sccm | 0 sccm |
Process time | 5:56 mins | C4F4 Flow | 0 sccm | 120 sccm |
APC mode | manual | RF coil | 2800 W | 1000 W |
APC setting | 86.8 % | RF Platen | 16 W | 0 W |
Cycle time | 6.5 s | 5 s |