Specific Process Knowledge/Thin film deposition/MVD: Difference between revisions

@@ Line 11: / Line 11: @@
 |-
 ! rowspan="2" align="center"| Common parameters
-! colspan="3" align="center"| Multiplexed parameters
+! rowspan="3" align="center"| Multiplexed parameters
+|-
+! Parameter
+! Setting
+! Parameter
+! Etch
+! Passivation
+|-
+! Temperature
+| 10<sup>o</sup>C
+! SF<sub>6</sub> Flow
+| 260 sccm
+| 0 sccm
+|-
+! No. of cycles
+| 31
+! O<sub>2</sub> Flow
+| 26 sccm
+| 0 sccm
+|-
+! Process time
+| 5:56 mins
+! C<sub>4</sub>F<sub>4</sub> Flow
+| 0 sccm
+| 120 sccm
+|-
+! APC mode
+| manual
+! RF coil
+| 2800 W
+| 1000 W
+|-
+! APC setting
+| 86.8 %
+! RF Platen
+| 16 W
+| 0 W
+|-
+!
+|
+! Cycle time
+| 6.5 s
+| 5 s
+|}
+{| border="2" cellpadding="2" cellspacing="1"
+|+ The flat recipe
+|-
+! rowspan="2" align="center"| Common parameters
+! rowspan="3" align="center"| Multiplexed parameters
 |-
 ! Parameter