Specific Process Knowledge/Thin film deposition/MVD: Difference between revisions

From LabAdviser
← Older editNewer edit →
VisualWikitext
Jml (talk | contribs)
Bureaucrats, danchip, Administrators
1,918 edits
Jml (talk | contribs)
Bureaucrats, danchip, Administrators
1,918 edits
Line 11: Line 11:
|-
|-
! rowspan="2" align="center"| Common parameters
! rowspan="2" align="center"| Common parameters
! colspan="3" align="center"| Multiplexed parameters  
! rowspan="3" align="center"| Multiplexed parameters
|-
! Parameter 
! Setting
! Parameter
! Etch
! Passivation
|-
! Temperature
| 10<sup>o</sup>C
! SF<sub>6</sub> Flow
| 260 sccm
| 0 sccm
|-
! No. of cycles
| 31
! O<sub>2</sub> Flow
| 26 sccm
| 0 sccm
|-
! Process time
| 5:56 mins
! C<sub>4</sub>F<sub>4</sub> Flow
| 0 sccm
| 120 sccm
|-
! APC mode
| manual
! RF coil
| 2800 W
| 1000 W
|-
! APC setting
| 86.8 %
! RF Platen
| 16 W
| 0 W
|-
!
|
! Cycle time
| 6.5 s
| 5 s
|}
 
 
 
 
 
 
 
{| border="2" cellpadding="2" cellspacing="1"
|+ The flat recipe
|-
! rowspan="2" align="center"| Common parameters
! rowspan="3" align="center"| Multiplexed parameters  
|-
|-
! Parameter   
! Parameter   

Revision as of 16:17, 2 April 2008

The Molecular Vapor Deposition Tool

The MVD is located in cleanroom 1

The Applied Microstructures MVD 100 system deposits molecular films on surfaces. These films serve a wide range of purposes ranging from antistiction coatings of nanoimprint lithography stamps to protecting MEMS structures. They are created as self-assembled monolayers on a surface when a molecular vapor of chemials is present. In most cases the chlorine atoms in the end of an flourinated organosilane react with -OH groups of the surface to form a chemical bond under elimination of HCL.


The shallolr recipe
Common parameters Multiplexed parameters
Parameter Setting Parameter Etch Passivation
Temperature 10oC SF6 Flow 260 sccm 0 sccm
No. of cycles 31 O2 Flow 26 sccm 0 sccm
Process time 5:56 mins C4F4 Flow 0 sccm 120 sccm
APC mode manual RF coil 2800 W 1000 W
APC setting 86.8 % RF Platen 16 W 0 W
Cycle time 6.5 s 5 s




The flat recipe
Common parameters Multiplexed parameters
Parameter Setting Parameter Etch Passivation
Temperature 10oC SF6 Flow 260 sccm 0 sccm
No. of cycles 31 O2 Flow 26 sccm 0 sccm
Process time 5:56 mins C4F4 Flow 0 sccm 120 sccm
APC mode manual RF coil 2800 W 1000 W
APC setting 86.8 % RF Platen 16 W 0 W
Cycle time 6.5 s 5 s
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/MVD&oldid=2538"