Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions
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|s007411 | |||
|<!-- '''Mask material''' --> 750nm KRF | |||
|<!-- '''Barc etch''' --> none | |||
|<!-- '''Coil power''' --> 800W | |||
|<!--'''Platen power'''--> 150W | |||
|<!--'''Pressure'''--> 2.5mTorr | |||
|<!--'''Flow rate C4F8'''--> 13sccm | |||
|<!--'''Flow rate H2'''--> 26sccm | |||
|<!--'''Flow rate Ar'''-->0 | |||
|<!--'''T'''--> 0 | |||
|<!--'''Process time'''--> 5min | |||
|<!--'''Comment'''--> Increased the platen power. The selectivity and profile looks good but the resist profile has been rounded more on the edge and this will effect the profile for a deeper etch. | |||
|<!--'''Results'''--> | |||
[[File:ICP metal s007419_17.jpg|100px|frameless]] [[File:ICP metal s007419_21.jpg|100px|frameless]] | |||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |||
trench opening as a fraction of pitch--> | |||
47.0% (1µm pitch)<br> | |||
44.6% (2µm pitch)<br> | |||
|<!--'''Profile angles'''--> | |||
83 | |||
|<!--'''Etch depth in SiO2'''--> | |||
708 nm<br> | |||
|<!--'''Etch rate'''--> | |||
142 nm/min | |||
|<!--'''Etch depth in resist'''--> | |||
294 nm | |||
|<!--'''Selectivity (resist:SiO2)'''--> | |||
1:2.4 <br> | |||
|<!--'''Etch rate in Si'''--> | |||
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|s007419 | |s007419 | ||