Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions
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!Results | !Results | ||
!Test | !Test | ||
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|Etch rate of thermal oxide | |Etch rate of thermal oxide | ||
|'''145 nm/min ''' ''by Martin Lind Ommen (fall 2016)'' | |'''145 nm/min ''' ''by Martin Lind Ommen (fall 2016)'' | ||
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|Selectivity to resist [:1] | |Selectivity to resist [:1] | ||
| (SiO2:resist) | | (SiO2:resist) | ||
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|Cr etch rate | |Cr etch rate | ||
|1.6 nm/min (1:90 to SiO2) ''by Martin Lind Ommen (fall 2016)'' | |1.6 nm/min (1:90 to SiO2) ''by Martin Lind Ommen (fall 2016)'' | ||
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|Profile [<sup>o</sup>] | |Profile [<sup>o</sup>] | ||
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|Wafer uniformity map (click on the image to view a larger image) | |Wafer uniformity map (click on the image to view a larger image) | ||
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|SEM profile images | |SEM profile images | ||
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|Etch rate in barc | |Etch rate in barc | ||
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