Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions
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|<!--'''T'''--> 0 | |<!--'''T'''--> 0 | ||
|<!--'''Process time'''--> 7min | |<!--'''Process time'''--> 7min | ||
|<!--'''Comment'''--> Reduced the platen power.Effect: ARDE - less CD increase but more possitive | |<!--'''Comment'''--> Reduced the platen power.Effect: ARDE - less CD increase but more possitive tappered profile. | ||
|<!--'''Results'''--> | |<!--'''Results'''--> | ||
[[File:ICP metal s007410_05.jpg|100px|frameless]] [[File:ICP metal s007410_09.jpg|100px|frameless]] | [[File:ICP metal s007410_05.jpg|100px|frameless]] [[File:ICP metal s007410_09.jpg|100px|frameless]] | ||