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| ==Overview of the performance of PECVD thin films and some process related parameters== | | ==Overview of the performance of PECVD thin films and some process related parameters== |
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| {| border="2" cellspacing="0" cellpadding="10"
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| !colspan="2" border="none" style="background:silver; color:black;" align="center"|PECVD
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| |style="background:WhiteSmoke; color:black"|<b>PECVD2</b>
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| |style="background:WhiteSmoke; color:black"|<b>PECVD3</b>
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| |-
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| !style="background:silver; color:black;" align="left"|Purpose
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| |style="background:LightGrey; color:black"|Deposition of dielectrica
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| |style="background:WhiteSmoke; color:black"|
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| *Silicon oxide
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| *Silicon nitride
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| *Silicon oxynitride
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| *PBSG (Phosphorous Boron doped Silica Glass)
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| *Silicon oxide doped with Germanium
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| *Silicon oxide
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| *Silicon nitride
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| *Silicon oxynitride
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| *PBSG (Phosphorous Boron doped Silica Glass)
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| *Silicon oxide doped with Germanium
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| |-
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| !style="background:silver; color:black" align="left" rowspan="4" valign="top" |Performance
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| |style="background:LightGrey; color:black"|Film thickness
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| |style="background:WhiteSmoke; color:black"|
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| *~10nm - 30µm
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| *~10nm - 30µm
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| |-
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| |style="background:LightGrey; color:black"|Index of refraction
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| |style="background:WhiteSmoke; color:black"|
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| *~1.4-2.1
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| *~1.4-2.1
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| |style="background:LightGrey; color:black"|Step coverage
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| |style="background:WhiteSmoke; color:black"|
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| *In general: Not so good
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| *PBSG: Floats at 1000<sup>o</sup>C
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| *In general: Not so good
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| *PBSG: Floats at 1000<sup>o</sup>C
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| |-
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| |style="background:LightGrey; color:black"|Film quality
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| |style="background:WhiteSmoke; color:black"|
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| *Not so dense film
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| *Hydrogen will be incorporated in the films
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| *Not so dense film
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| *Hydrogen will be incorporated in the films
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| |-
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| !style="background:silver; color:black" align="left" rowspan="3" valign="top" |Process parameter range
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| |style="background:LightGrey; color:black"|Process Temperature
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| |style="background:WhiteSmoke; color:black"|
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| *300 <sup>o</sup>C
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| *300 <sup>o</sup>C
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| |style="background:LightGrey; color:black"|Process pressure
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| |style="background:WhiteSmoke; color:black"|
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| *~200-900 mTorr
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| *~200-900 mTorr
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| |-
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| |style="background:LightGrey; color:black"|Gas flows
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| |style="background:WhiteSmoke; color:black"|
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| *SiH<math>_4</math>:0-50 sccm
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| *N<math>_2</math>O:0-4260 sccm
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| *NH<math>_3</math>:0-740 sccm
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| *N<math>_2</math>:0-3000 sccm
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| *GeH<math>_4</math>:0-6.00 sccm
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| *5%PH<math>_3</math>:0-100 sccm
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| *3%B<math>_2</math>H<math>_6</math>:0-1000 sccm
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| *SiH<math>_4</math>:0-60 sccm
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| *N<math>_2</math>O:0-3000 sccm
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| *NH<math>_3</math>:0-1000 sccm
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| *N<math>_2</math>:0-3000 sccm
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| *GeH<math>_4</math>:0-6.00 sccm
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| *5%PH<math>_3</math>:0-99 sccm
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| *5%B<math>_2</math>H<math>_6</math>:0-1000 sccm
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| !style="background:silver; color:black" align="left" rowspan="3" valign="top" |Substrates
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| |style="background:LightGrey; color:black"|Batch size
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| |style="background:WhiteSmoke; color:black"|
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| *1-3 4" wafer per run
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| *1 6" wafer per run
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| *Or several smaller pieces
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| *Deposition on one side of the substrate
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| *One 4" wafer per run
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| *One 6" wafer per run
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| *Or several smaller pieces on carrier wafer
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| *Deposition on one side of the substrate
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| | style="background:LightGrey; color:black"|Materials allowed
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| |style="background:WhiteSmoke; color:black"|
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| *Silicon wafers, Quartz (fused silica) wafers,
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| **with layers of silicon oxide or silicon (oxy)nitride
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| *III-V wafers (on special carriers)
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| *Silicon wafers, Quarts (fused silica) wafers
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| **with layers of silicon oxide or silicon (oxy)nitride
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| **Other material (can be allowed if less than 3.9 cm2 is exposed to the plasma (<5% coverage of a 4" wafer), please ask!
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| |}
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| {| border="2" cellspacing="0" cellpadding="10" | | {| border="2" cellspacing="0" cellpadding="10" |
