Specific Process Knowledge/Wafer cleaning: Difference between revisions

@@ Line 11: / Line 11: @@
 <br/>
-===Wafers that have been in the KOH baths, KOH BHF baths or the warm phosphoric acid===
+===Wafers that have been in KOH baths (Si Etch 1, 2 and 3), KOH BHF baths or 'Nitride etch: H3PO4' (warm phosphoric acid===
-Wafers that have been etched in KOH is often transferred directly to the warm phosphoric acid for nitride strip. Therefore wafers that have been in the KOH baths, KOH BHF baths or the warm phosphoric acid always need at minimum a 7-up or Piranha clean before they can be further processed.
+Wafers that have been etched in KOH are often etched in warm phosphoric acid afterwards to strip the silicon nitride etch mask. Therefore, wafers that have been processed in KOH baths, KOH BHF baths or phosphoric acid nitride etch baths often need at minimum a 7-up or Piranha clean before they can be further processed (in order to remove KOH etch residuals and metal ions).
 <br/>
 <br/>