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Specific Process Knowledge/Etch/III-V ICP/SiO2: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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No edit summary
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|Etch rate of PECVD BPSG
|Etch rate of PECVD BPSG
|'''39.4nm/min (22-01-2016)'''  
|'''39.4nm/min (22-01-2016)'''
|-
|Etch rate in thermal oxide
|'''48nm/min''' (bghe 17-01-2017)- whole 4" wafer with capton tape
|-
|-
|Selectivity to  resist [:1]
|Selectivity to  resist [:1]
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