Specific Process Knowledge/Thin film deposition/Deposition of Copper: Difference between revisions
→Deposition of Cu: removed Alcatel, added Temescal |
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! | ! | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/ | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Cu|Electroplating-Cu]]) | ! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Cu|Electroplating-Cu]]) | ||
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!Pre-clean | !Pre-clean | ||
| | |Ar ion bombardment | ||
|RF Ar clean | |RF Ar clean | ||
|None | |None | ||
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!Layer thickness | !Layer thickness | ||
|10Å to | |10Å to 1µm* | ||
|10Å to 1µm* | |10Å to 1µm** | ||
| thickness window undefined yet | | thickness window undefined yet | ||
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! Deposition rate | ! Deposition rate | ||
| | |1Å/s to 10Å/s | ||
| ~1Å/s | | ~1Å/s | ||
| | | | ||
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! Batch size | ! Batch size | ||
| | | | ||
*Up to | *Up to 4x6" wafers | ||
*Up to 3x8" wafers (ask for holder) | |||
*smaller pieces | *smaller pieces | ||
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* Silicon | *Silicon | ||
* Silicon oxide | *Silicon oxide | ||
* Silicon (oxy)nitride | *Silicon (oxy)nitride | ||
* Photoresist | *Photoresist | ||
* PMMA | *PMMA | ||
* Mylar | *Mylar | ||
* | *Metals | ||
* | *See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Comment | ! Comment | ||
| | |As of August 2018, Cu has not yet been deposited in this machine. Contact Thin Film group to develop a process. | ||
| | | | ||
|Sample must be compatible with plating bath. Seed metal layer required to run electroplating process. | |Sample must be compatible with plating bath. Seed metal layer required to run electroplating process. | ||
|} | |} | ||
'''*''' ''To deposit layers thicker | '''**''' ''To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)'' | ||
'''*''' ''To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)'' | |||
== Studies of Cu deposition processes == | == Studies of Cu deposition processes == | ||
[[/Deposition of Copper|Roughness of Cu layers]] - ''Roughness of Cu layers deposited with Alcatel'' | [[/Deposition of Copper|Roughness of Cu layers]] - ''Roughness of Cu layers deposited with Alcatel'' |
Revision as of 09:37, 6 August 2018
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Deposition of Cu
Copper can be deposited by e-beam evaporation, sputtering or electroplating. In the chart below you can compare the different deposition equipments.
E-beam evaporation (Temescal) | Sputter deposition (Lesker) | Electroplating (Electroplating-Cu) | |
---|---|---|---|
General description | E-beam deposition of Cu | Sputter deposition of Cu | Electroplating of Cu |
Pre-clean | Ar ion bombardment | RF Ar clean | None |
Layer thickness | 10Å to 1µm* | 10Å to 1µm** | thickness window undefined yet |
Deposition rate | 1Å/s to 10Å/s | ~1Å/s | |
Batch size |
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Allowed materials |
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Base Materials:
Seed metals:
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Comment | As of August 2018, Cu has not yet been deposited in this machine. Contact Thin Film group to develop a process. | Sample must be compatible with plating bath. Seed metal layer required to run electroplating process. |
** To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk) * To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)
Studies of Cu deposition processes
Roughness of Cu layers - Roughness of Cu layers deposited with Alcatel