Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions
| Line 6: | Line 6: | ||
== Deposition of Aluminium Nitride == | == Deposition of Aluminium Nitride == | ||
AlN can be deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen. AlN film can be deposited by using the [[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]]. | AlN can be either deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen or using atomic layer deposition. AlN film can be deposited by using the [[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]] or the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]. | ||
==Only one method at the moment== | ==Only one method at the moment== | ||