Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions
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![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!Generel description | !Generel description | ||
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*Reactive Sputtering ( 2" Al target) | *Reactive Sputtering ( 2" Al target) | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
!Stoichiometry | !Stoichiometry | ||
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*Not tested | *Not tested | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!Film Thickness | !Film Thickness | ||
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* 0nm - 200nm | * 0nm - 200nm | ||
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!Deposition rate | !Deposition rate | ||
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* Not tested | * Not tested | ||
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!Step coverage | !Step coverage | ||
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*Very good | *Very good | ||
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!Process Temperature | !Process Temperature | ||
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* Up to | * Up to 600<sup>o</sup>C | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
!Substrate size | !Substrate size | ||
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* chips | * chips | ||
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*SU-8 | *SU-8 | ||
*Any metals | *Any metals | ||
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Revision as of 09:55, 19 September 2016
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Deposition of Aluminium Nitride
AlN can be deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen. AlN film can be deposited by using the Lesker Sputter System.
Only one method at the moment
Sputter System Lesker | |
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Generel description |
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Stoichiometry |
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Film Thickness |
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Deposition rate |
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Step coverage |
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Process Temperature |
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Substrate size |
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Allowed materials |
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