Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions

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-![[Specific Process Knowledge/Thin film deposition/Multisource PVD|Cryofox PVD co-sputter/evaporation]]
 ![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
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 !Generel description
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-*Reactive Sputtering ( 6" Al target) or AlN target sputtering
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 *Reactive Sputtering ( 2" Al target)
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 !Stoichiometry
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-*Depend on the target power
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 *Not tested
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 !Film Thickness
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-* 0nm - 200nm
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 * 0nm - 200nm
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 !Deposition rate
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-* Not tested
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 * Not tested
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 !Step coverage
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-*Very good
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 *Very good
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 !Process Temperature
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-* Up to 400<sup>o</sup>C
+* Up to 600<sup>o</sup>C
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-* Up to 450<sup>o</sup>C
 |-
 |-style="background:LightGrey; color:black"
 !Substrate size
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-* 100 mm wafers (Up to 12 wafers at a time)
-* 150 mm wafers (Up to 4 wafers at a time)
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 * chips
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 *SU-8
 *Any metals
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-*almost any
 |-
 |}