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Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing: Difference between revisions

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=Process recommendations=
=Process recommendations=
==This section is under construction [[Image:section under construction.jpg|70px]]==


Recommended parameters for development of different resists.
Recommended parameters for development of different resists.  
 
Information about exposure dose can be found here: [[Specific_Process_Knowledge/Lithography/UVExposure_Dose#Exposure_dose_when_using_AZ_726_MIF_developer_.28TMAH.29|Information on UV exposure dose]]
*'''AZ nLOF 2020'''
Exposure dose: 16s @ 7 mW/cm2 (2 µm)


*'''2µm AZ nLOF 2020'''
PEB: 60s @ 110°C
PEB: 60s @ 110°C


Development: SP 30s. For lift-off SP 60s (sidewall angle ~15°)
Development: SP 30s. For lift-off SP 60s (sidewall angle ~15°)
*'''AZ MiR 701'''
*'''1.5µm AZ MiR 701'''
Exposure dose: ?
PEB: 60s @ 110°C


PEB: 60s @ 110°C
Development: SP 60s
*'''1.5µm AZ 5214E''' (positive process)
No PEB


Development: SP 60s
Development: SP 60s
*'''AZ 5214E''' (positive process)
*'''2.2µm AZ 5214E''' (image reversal)
Exposure dose: 8.5s @ 7 mW/cm2 (1.5 µm)
Reversal bake: 100s or 120s @ 110°C


No PEB
Flood exposure: ~200 mJ/cm<sup>2</sup>


Development: SP 60s
Development: SP 60s
*'''AZ 4562'''
*'''6.2µm AZ 4562'''
Exposure dose: ~60s @ 7 mW/cm2 (10 µm)
No PEB


Development: MP 3x60s
*'''10µm AZ 4562'''
No PEB
No PEB


Development: MP 4x60s ?
Development: MP 4x60s or MP 5x60s


=Standard Processes=
=Standard Processes=
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