Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si: Difference between revisions
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==Test of the deposition rate of Silicon and film characteristics== | ==Test of the deposition rate of Silicon and film characteristics== | ||
{| border="2" cellspacing="1" cellpadding="3" align="left" | |||
! | |||
!Recipe 2 - with the new (small) grids) | |||
|- | |||
|Platen angle | |||
|10 degrees | |||
|- | |||
|Platen rotation speed | |||
|20rpm | |||
|- | |||
|Ar(N) flow | |||
|4 sccm | |||
|- | |||
|Ar(dep. source) flow | |||
|8 sccm | |||
|- | |||
|I(N) | |||
|240mA | |||
|- | |||
|Power setting | |||
|700W | |||
|- | |||
|I(B) | |||
|200mA | |||
|- | |||
|V(B) | |||
|1100V | |||
|- | |||
|Vacc(B) | |||
|400V | |||
|- | |||
|} | |||
<br clear="all" /> | |||
===Results with recipe 2 and the new (small) grids=== | |||
{| border="2" cellspacing="1" cellpadding="3" align="left" | |||
!Depostion time | |||
!10 min (2016-08-04 bghe) | |||
|- | |||
|Characterization method | |||
|Ellipsometer 3 angles | |||
|- | |||
|Deposition thickness | |||
|50 nm (2016-08-04 bghe) | |||
|- | |||
|Deposition rate | |||
|5.0 nm/min | |||
|- | |||
|Refractive index @632nm | |||
| | |||
n=? <br/> | |||
k=? | |||
|- | |||
|Refractive index @1000nm <br/> | |||
@950nm using the ellipsometer | |||
| | |||
n=? <br/> | |||
k=? | |||
|- | |||
|Refractive index @1550nm <br/> | |||
| | |||
n=? <br/> | |||
k=? | |||
|- | |||
|} | |||
<br clear="all" /> | |||
===Recipe=== | ===Recipe=== | ||