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Specific Process Knowledge/Etch/Etching of Silicon: Difference between revisions

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|-style="background:silver; color:black"
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!
![[Specific Process Knowledge/Etch/KOH Etch|KOH Etch]]
![[Specific Process Knowledge/Etch/Si Etch|Si Etch]]
![[Specific Process Knowledge/Etch/Wet Polysilicon Etch|Wet PolySilicon etch]]
![[Specific Process Knowledge/Etch/Wet Polysilicon Etch|Wet PolySilicon etch]]
![[Specific Process Knowledge/Etch/RIE (Reactive Ion Etch)|RIE (Reactive Ion Etch)]]
![[Specific Process Knowledge/Etch/RIE (Reactive Ion Etch)|RIE (Reactive Ion Etch)]]
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!Substrate size
!Substrate size
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*<nowiki>#</nowiki>25 wafers of 100mm in KOH2
*<nowiki>#</nowiki>25 wafers of 100mm or 150nm in Si Etch 1 & 2
*<nowiki>#</nowiki>1-5 wafers of 100mm or 50mm in "Fumehood KOH"
*<nowiki>#</nowiki>25 wafers of 100mm or 150nm and smaller samples in Si Etch 3 (fume hood)
*<nowiki>#</nowiki>25 wafers of 100mm or 150mm in KOH3
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*<nowiki>#</nowiki>25 100 mm wafers in our 100mm bath
*<nowiki>#</nowiki>25 100 mm wafers in our 100mm bath
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*Silicon Nitride
*Silicon Nitride
*Silicon Oxynitride
*Silicon Oxynitride
*Other materials (only in "Fumehood KOH" or "KOH1")
*Other materials (only in "Si Etch 3 (fume hood))
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*Silicon
*Silicon