Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions

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!
!
![[Specific Process Knowledge/Etch/Wet Chromium Etch|Cr wet etch 1]]
![[Specific Process Knowledge/Etch/Wet Chromium Etch|Cr wet etch]]
![[Specific Process Knowledge/Etch/Wet Chromium Etch|Cr wet etch 2]]
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE (Ionfab300+)]]
![[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE (Ionfab300+)]]
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!Generel description
!Generel description
|Wet etch of Cr premixed (Chrome etch 18)
|Wet etch of Cr premixed (Chrome etch 18)
|Wet etch of Cr that you need to mix your self
|Dry plasma etch of Cr
|Dry plasma etch of Cr
|Sputtering of Cr - pure physical etch
|Sputtering of Cr - pure physical etch
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*~?nm/min
*~?nm/min
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*~40-100nm/min
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*~14 nm/min (depending on features size and etch load)  
*~14 nm/min (depending on features size and etch load)  
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|-style="background:WhiteSmoke; color:black"
!Etch profile
!Etch profile
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*Isotropic
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*Isotropic
*Isotropic
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|-style="background:LightGrey; color:black"
!Substrate size
!Substrate size
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*Any size and number that can go inside the beaker in use
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*Any size and number that can go inside the beaker in use
*Any size and number that can go inside the beaker in use
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!'''Allowed materials'''
!'''Allowed materials'''
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No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
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No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals

Revision as of 12:47, 7 February 2019

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Etching of Chromium

Etching of chromium can be done either by wet etch, dry etch or by sputtering with ions.


Comparison of Chromium Etch Methods

Cr wet etch ICP metal IBE (Ionfab300+)
Generel description Wet etch of Cr premixed (Chrome etch 18) Dry plasma etch of Cr Sputtering of Cr - pure physical etch
Etch rate range
  • ~?nm/min
  • ~14 nm/min (depending on features size and etch load)
  • ~30nm/min (not tested yet)
Etch profile
  • Isotropic
  • Anisotropic (vertical sidewalls)
  • Anisotropic (angles sidewalls, typical around 70 dg)
Substrate size
  • Any size and number that can go inside the beaker in use
  • smaller pieces on a carrier wafer
  • #1 100mm wafers (when set up to 100mm wafers)
  • #1 150mm wafers (when set up to 150mm wafers)

Smaller pieces glued to carrier wafer

  • #1 50mm wafer
  • #1 100mm wafer
  • #1 150mm wafer
  • #1 200mm wafer
Allowed materials

No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals

  • Silicon
  • Quartz/fused silica
  • Photoresist/e-beam resist
  • PolySilicon,
  • Silicon oxide
  • Silicon (oxy)nitride
  • Aluminium
  • Titanium
  • Chromium
  • Silicon
  • Silicon oxides
  • Silicon nitrides
  • Metals from the +list
  • Metals from the -list
  • Alloys from the above list
  • Stainless steel
  • Glass
  • III-V materials
  • Resists
  • Polymers
  • Capton tape