Specific Process Knowledge/Bonding/Eutectic bonding: Difference between revisions

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 Eutectic bonding depends on a formation of an eutecticum in the bond interphase. This makes bonding of two substates by use of eg. a AuSi eutecticum possible at temperatures much lower than the actual melting points of either of the two (in this case bonding can be done at around 390<sup>o</sup>C). The bonding strecth is quite good, but far from as good as anodic bonding. Different eutecticums have a different eutectic (bonding) temperature.
+{| border="2" cellspacing="0" cellpadding="4" align="center"
+!Eutecticum
+!Temperature
+|- valign="top"
+|'''General description'''
+|For bonding two substrates by use of an interphase that makes an eutecticum.
+|For bonding two identical materials.
+|For bonding Si and Glass.
+|-valign="top"
+|'''Bonding temperature'''
+|Depending on the eutecticum 310<math>^o</math>C to 400<math>^o</math>C.
+|Depending on defects 50<math>^o</math>C to 400<math>^o</math>C.
+|Depending on the voltage 300<math>^o</math>C to 500<math>^o</math>C Standard is 400<math>^o</math>C.
+|-valign="top"
+|'''Annnealing temperature'''
+|No annealing
+|1000<math>^o</math>C in the bond furnace C3
+|No annealing
+|-valign="top"
+|'''Materials possible to bond'''
+|Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Ni/Si
+|Si/Si, SiO<math>_2</math>/SiO<math>_2</math>
+|Si/Pyrex (glass)
+|-valign="top"
+|'''Substrate size'''
+|Up to 6" (aligning only possible for 4" and 6")
+|Up to 6" (aligning only possible for 4" and 6")
+|Up to 6" (aligning only possible for 4" and 6")
+|-valign="top"
+|'''Cleaning'''
+|Cleaning by N2.
+|Wet chemical cleaning, [[Specific Process Knowledge/Wafer cleaning/IMEC|IMEC]].
+|Cleaning by N2.
+|-valign="top"
+|'''IR alignment'''
+|Double side polished wafers.
+|Double side polished wafers.
+|Not relevant.
+|-
+|}