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| |[[media:Process_Flow_mrEBL6000.docx|Process_Flow_mrEBL6000.docx]] | | |[[media:Process_Flow_mrEBL6000.docx|Process_Flow_mrEBL6000.docx]] |
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| == Process Flow ==
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| Test of mr EBL 6000.1; a negative e-beam resist from MicroResist.
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| {|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;"
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| !Equipment
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| !Process Parameters
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| !Comments
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| |-style="background:WhiteSmoke; color:black; text-align:center"
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| !colspan="4"|Pretreatment
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| |-style="background:LightGrey; color:black"
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| |4" Si wafers
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| |1 min @ 110 degC, hotplate
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| |-style="background:WhiteSmoke; color:black; text-align:center"
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| !colspan="4"|Spin Coat
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| |Spin Coater Manual, LabSpin, A-5
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| |mr EBL 6000.1 E-beam resist
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| 60 sec at various spin speed.
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| Acceleration 2000 s-2,
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| softbake 3 min at 110 deg Celcius
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| |Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice.
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| !colspan="4"|Characterization
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| |Ellipsometer VASE B-1
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| |9 points measured on 100 mm wafer
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| |ZEP program used; measured at 70 deg only
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| !colspan="4"|E-beam Exposure
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| |-style="background:LightGrey; color:black"
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| |JEOL 9500 E-beam writer, E-1
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| |Dosepattern 15nm - 100nm,
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| dose 120-280 muC/cm2
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| |Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array
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| !colspan="4"|Development
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| |Fumehood, D-3
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| |60 sec in
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| 60 sec rinse in IPA,
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| N2 Blow dry
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| |Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun.
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| !colspan="4"|Characterization
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| |Zeiss SEM Supra 60VP, D-3
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| |2-3 kV, shortest working distance possible, chip mounted with Al tape
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| |The wafers are diced into smaller pieces and sputter coated with Pt at DTU CEN before SEM inspection; please contact [mailto:ramona.mateiu@cen.dtu.dk Ramona Valentina Mateiu] for further information.
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| |}
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