Specific Process Knowledge/Wafer and sample drying/Critical Point Dryer: Difference between revisions
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!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Process parameter range | !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Process parameter range | ||
|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
|style="background:WhiteSmoke; color:black"|0<sup>o</sup>C to 45<sup>o</sup>C | |style="background:WhiteSmoke; color:black"|0 <sup>o</sup>C to 45 <sup>o</sup>C | ||
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|style="background:LightGrey; color:black"|Process pressure | |style="background:LightGrey; color:black"|Process pressure | ||
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==Comparison of samples dried in air and with Critical Point Dryer== | ==Comparison of samples dried in air and with Critical Point Dryer== | ||