Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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| Line 17: | Line 17: | ||
| Pre-clean | | Pre-clean | ||
|RF Ar clean | |RF Ar clean | ||
| | |RCA clean for wafers that are not fresh form the box. | ||
|- | |- | ||
| Layer thickness | | Layer thickness | ||
|10Å to 1µm | |10Å to 1µm | ||
| | |~50Å to 2µm, if thicker layers are needed please ask the furnace team. | ||
|- | |- | ||
| Deposition rate | | Deposition rate | ||
|2Å/s to 15Å/s | |2Å/s to 15Å/s | ||
| | | | ||
*undoped, boron doped:~100Å/min | |||
*Phospher doped:~20Å/min | |||
|- | |- | ||
|Process temperature | |Process temperature | ||
| Line 32: | Line 34: | ||
|- | |- | ||
|Step coverage | |Step coverage | ||
| | |Poor | ||
| | |Good | ||
|- | |- | ||
| | |Adhesion | ||
| | |Bad for pyrex, for other materials we do not know | ||
| | |Good for quartz, silicon oxide, silicon nitride, silicon | ||
|- | |- | ||
|Substrate material allowed | |Substrate material allowed | ||
| | |Pyrex, Quartz, Silicon, metals, oxide, nitride, blue tape | ||
| | |Quartz, Silicon, oxide, nitride | ||
|- | |- | ||
|Doping facility | |Doping facility | ||
Revision as of 11:37, 12 March 2008
PolySilicon can be sputtered in Alcatel and be deposited in the PolySilicon furnace.In the chart below you can compare the two different deposition methodes:
| Sputter (Alcatel) | Furnace PolySi | |
|---|---|---|
| Batch size |
|
|
| Pre-clean | RF Ar clean | RCA clean for wafers that are not fresh form the box. |
| Layer thickness | 10Å to 1µm | ~50Å to 2µm, if thicker layers are needed please ask the furnace team. |
| Deposition rate | 2Å/s to 15Å/s |
|
| Process temperature | 560 oC and 620 oC | |
| Step coverage | Poor | Good |
| Adhesion | Bad for pyrex, for other materials we do not know | Good for quartz, silicon oxide, silicon nitride, silicon |
| Substrate material allowed | Pyrex, Quartz, Silicon, metals, oxide, nitride, blue tape | Quartz, Silicon, oxide, nitride |
| Doping facility | None | Can be doped during deposition with Boron and/or Phosphorous |
Sputtered Silicon in the Alcatel
| The parameter(s) changed | New value(s) | Deposition rate |
|---|---|---|
| Standard parameters | None | |
| Power | 400W | 3.8 Å/s |