Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic: Difference between revisions

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Jmli (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,416 edits
Line 28: Line 28:
! width="40" | Coil  
! width="40" | Coil  
! width="40" | Platen
! width="40" | Platen
! width="40" | Runs
! width="40" | SEM images
! width="40" | Keywords
! width="40" | Keywords
|-
|-
Line 49: Line 49:
| 400            <!--Coil power  -->
| 400            <!--Coil power  -->
| 3          <!--Platen power  -->
| 3          <!--Platen power  -->
| [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic/isoslow1|1 ]]      <!-- link processes -->
| [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic/isoslow1|Click ]]      <!-- link processes -->
| NA          <!--Keywords  -->
| NA          <!--Keywords  -->
|-
|-
|}
|}

Revision as of 09:54, 24 June 2016

Isotropic etching in silicon on the ICP Metal Etch

Process parameters
Recipe Step Temp. Time Pres. Hardware Gasses RF powers Observations
SF6 O2 C4F8 Ar CF4 H2 CH4 BCl3 Cl2 HBr Coil Platen SEM images Keywords
isoslow1 A 20 - 90 - 50 0 0 0 0 0 0 0 0 0 400 3 Click NA
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