Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions
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[[image:ALD.jpg|300x300px|right|thumb|Picosun R200 ALD, positioned in cleanroom F-2.]] | [[image:ALD.jpg|300x300px|right|thumb|Picosun R200 ALD, positioned in cleanroom F-2.]] | ||
The Picosun R200 ALD (atomic layer deposition) tool is used to deposit a very thin layer of Al<sub>2</sub>O<sub>3</sub> or TiO<sub>2</sub> on different samples. | The Picosun R200 ALD (atomic layer deposition) tool is used to deposit a very thin layer of Al<sub>2</sub>O<sub>3</sub> or TiO<sub>2</sub> (amorphous or anatase) on different samples. | ||
Each process is using two different precurcors. The reaction takes place in cycles. During each cycle a very short pulse of each precursor is introduced into the ALD reaction chamber in turns, and in-between each precursor pulse the chamber is purged with nitrogen. All reactions have to take place on the sample surface, thus it is very important that each precurcor is removed from the chamber before the next one is introduced. In that way the ALD layer will be deposited atomic layer by atomic layer. | Each process is using two different precurcors. The reaction takes place in cycles. During each cycle a very short pulse of each precursor is introduced into the ALD reaction chamber in turns, and in-between each precursor pulse the chamber is purged with nitrogen. All reactions have to take place on the sample surface, thus it is very important that each precurcor is removed from the chamber before the next one is introduced. In that way the ALD layer will be deposited atomic layer by atomic layer. | ||