Specific Process Knowledge/Etch/DRIE-Pegasus/processA/PrA-0: Difference between revisions

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! width="30" | Wafer info
! width="30" | Wafer info
! width="40" | Material/ Exposed area
! width="40" | Exposed area
! width="40" | Conditioning
! width="40" | Conditioning
! width="40" | Recipe
! width="40" | Recipe
! width="40" | Wafer ID
! width="40" | Wafer ID
|-
|-
| 18/8-2014
| 2/5-2016
| 4" Danchip QC Wafer  
| 4" Travka20 Wafer  
| 1.5 µm AZ resist, daq2 mask
| 20 % Si
| Si / 10 %
| 3 minute TDESC clean
| Pegasus/jmli
| PrA-0, 80 cycles or 14:40 minutes  
| 10 minute TDESC clean, 10 minute PR strip post process
| C03991.01
| danchip/QC/QCprocA, 55 cycles (11+44) or 10:05 minutes  
| S004257
! OLD showerhead
|  
|  
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Revision as of 14:19, 15 June 2016


Process runs
Date Substrate Information Process Information SEM Images
Wafer info Exposed area Conditioning Recipe Wafer ID
2/5-2016 4" Travka20 Wafer 20 % Si 3 minute TDESC clean PrA-0, 80 cycles or 14:40 minutes C03991.01