Specific Process Knowledge/Etch/Etching of Bulk Glass: Difference between revisions
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! Wet Silicon Oxide etch (BHF and SIO Etch (wetting agent)) | ! Wet Silicon Oxide etch (BHF and SIO Etch (wetting agent)) | ||
! RIE | ! RIE | ||
|- valign="top" | |- valign="top" | ||
|'''General description''' | |'''General description''' | ||
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*Anisotropic etch: vertical sidewalls | *Anisotropic etch: vertical sidewalls | ||
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|-valign="top" | |-valign="top" | ||
|'''Possible masking materials''' | |'''Possible masking materials''' | ||
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*Other metals that covers less the 5% of the wafer area (ONLY RIE2!) | *Other metals that covers less the 5% of the wafer area (ONLY RIE2!) | ||
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|- valign="top" | |- valign="top" | ||
|'''Etch rate''' | |'''Etch rate''' | ||
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*Typically 40-120 nm/min can be increased or decreased by using other recipe parameters. | *Typically 40-120 nm/min can be increased or decreased by using other recipe parameters. | ||
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|-valign="top" | |-valign="top" | ||
|'''Batch size''' | |'''Batch size''' | ||
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*1 wafer at a time | *1 wafer at a time | ||
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|-valign="top" | |-valign="top" | ||
|'''Size of substrate''' | |'''Size of substrate''' | ||
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*4" wafers or smaller pieces | *4" wafers or smaller pieces | ||
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|-valign="top" | |-valign="top" | ||
|'''Allowed materials''' | |'''Allowed materials''' | ||
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*Other metals that covers less the 5% of the wafer area (ONLY RIE2!) | *Other metals that covers less the 5% of the wafer area (ONLY RIE2!) | ||
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|} | |} | ||