Specific Process Knowledge/Etch/DRIE-Pegasus/DUVetch: Difference between revisions

Revision as of 12:51, 2 June 2016

Etch processes designed for stepper resists

The stepper produces features down to 200 nm. Here, etch processes especially designed for stepper patterns and resists are described. We intend to develop them continuously so keep an eye on this page. The best ones so far are:

**Process parameters**
Recipe	Step	Temp.	Deposition step						Etch step														Process
			Time	Pressure	C₄F₈	SF₆	O₂	Coil	Time		Pressure		C₄F₈		SF₆		O₂		Coil		Platen		HW	Runs	Keywords
			Time	Pressure	C₄F₈	SF₆	O₂	Coil	B	M	B	M	B	M	B	M	B	M	B	M	B	M	HW	Runs	Keywords
NBoost04	A	20	2.8	5	60	0	0	500	1.5	3.5	30%	5	0	20	100	100	0	0	500	500	50	10	LF+B100	2	VERY nice: scallops, straight sidewalls

**Process parameters**
Recipe	Step	Temp.	Deposition step						Etch step							Process observations
Recipe	Step	Temp.	Time	Pressure	C₄F₈	SF₆	O₂	Coil	Time	Pressure	C₄F₈	SF₆	O₂	Coil	Platen	HW	Runs	Key words
polySOI-10	etch	20	2.5	10	50	0	0	600	5	10	20	60	5	400	40	-	5	very nice, blurred scallops
polySOI-10a	etch	20	2.5	10	50	0	0	600	5	10	10	70	5	400	40	-	200+	Works only with limited open area - probably less than 20 %, very stable, excellent and extensive track record

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 | -       <!-- hardware setting -->
 ! [[Specific Process Knowledge/Etch/DRIE-Pegasus/DUVetch/polySOI10a | 200+]]       <!-- link processes -->
-| very stable, excellent and extensive track record     <!-- keywords -->
+| Works only with limited open area - probably less than 20 %, very stable, excellent and extensive track record     <!-- keywords -->
 |-
 |}