Specific Process Knowledge/Etch/DRIE-Pegasus/DUVetch/polySOI10: Difference between revisions
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Revision as of 10:43, 2 June 2016
| Date | Substrate Information | Process Information | SEM Images | ||||||
|---|---|---|---|---|---|---|---|---|---|
| Wafer info | Mask | Material/ Exposed area | Tool / Operator | Conditioning | Recipe | Wafer ID | Comments | ||
| 28/8-2014 | 6" DUVboxA wafer | standard stepper mask (50 nm barc + 320 nm krf) | Si / 50%+ | Pegasus / jmli | 30 sec barc etch | SOI4\polySOI-10 , 70 cycles or 8:45 minutes | S004289 |
| |
| 28/8-2014 | 6" DUVboxB wafer | Si/200nm Oxide/1800 nm poly / standard stepper mask (50 nm barc + 320 nm krf) | poly / 50%+ | Pegasus / jmli | 75 sec barc etch | SOI4\polySOI-10 , 20 cycles or 2:30 minutes | S004289 |
| |
| 28/8-2014 | 6" DUVboxB wafer | Si/200nm Oxide/1800 nm poly / standard stepper mask (50 nm barc + 320 nm krf) | poly / 50%+ | Pegasus / jmli | 0 sec barc etch | SOI4\polySOI-10 , 30 + 10 cycles or 5:00 minutes | S004291 (two processes) | S004289 reprocessed, probably overetched -> no spikes |
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