Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions
| Line 62: | Line 62: | ||
? | ? | ||
|- | |- | ||
|- | |||
|s007410 | |||
|<!-- '''Mask material''' --> 750nm KRF | |||
|<!-- '''Barc etch''' --> none | |||
|<!-- '''Coil power''' --> 800W | |||
|<!--'''Platen power'''--> 75W | |||
|<!--'''Pressure'''--> 2.5mTorr | |||
|<!--'''Flow rate C4F8'''--> 8sccm | |||
|<!--'''Flow rate H2'''--> 30sccm | |||
|<!--'''Flow rate Ar'''-->0 | |||
|<!--'''T'''--> 0 | |||
|<!--'''Process time'''--> 7min | |||
|<!--'''Comment'''--> ARDE - little CD increase | |||
|<!--'''Results'''--> | |||
[[File:ICP metal s007410_05.jpg|100px|frameless]] [[File:ICP metal s007410_09.jpg|100px|frameless]] | |||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |||
trench opening as a fraction of pitch--> | |||
42.3% (2µm pitch)<br> | |||
47.0% (average) (3µm pitch)<br> | |||
|<!--'''Profile angles'''--> | |||
80-82 | |||
|<!--'''Etch depth in SiO2'''--> | |||
0 nm (1µm pitch)<br> | |||
270 nm (3µm pitch)<br> | |||
|<!--'''Etch rate'''--> | |||
0 nm/min (1µm pitch)<br> | |||
39nm/min (?µm pitch)<br> | |||
|<!--'''Etch depth in resist'''--> | |||
100nm | |||
|<!--'''Selectivity (resist:SiO2)'''--> | |||
1:0 (1µm pitch)<br> | |||
1:2.7 (2µm pitch)<br> | |||
|<!--'''Etch rate in Si'''--> | |||
|- | |||
|s006656 | |s006656 | ||