Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions
| Line 94: | Line 94: | ||
1:0:68 | 1:0:68 | ||
|<!--'''Etch rate in Si'''--> | |<!--'''Etch rate in Si'''--> | ||
|- | |||
|s007409 | |||
|<!-- '''Mask material''' --> 750nm KRF | |||
|<!-- '''Barc etch''' --> none | |||
|<!-- '''Coil power''' --> 800W | |||
|<!--'''Platen power'''--> 150W | |||
|<!--'''Pressure'''--> 2.5mTorr | |||
|<!--'''Flow rate C4F8'''--> 8sccm | |||
|<!--'''Flow rate H2'''--> 30sccm | |||
|<!--'''Flow rate Ar'''-->0 | |||
|<!--'''T'''--> 0 | |||
|<!--'''Process time'''--> 5min | |||
|<!--'''Comment'''--> Repeated Pexiongs recipe without barc etch and only 5 min's runs. It probably takes about 1 min to get through the barc. If you count that in then the etch rate and relectivity to resist is almost the same as for the first run. Effect: CD increase | |||
|<!--'''Results'''--> | |||
[[File:ICP metal s007409_06.jpg|100px|frameless]] [[File:ICP metal s007409_07.jpg|100px|frameless]] | |||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |||
trench opening as a fraction of pitch--> | |||
47.4% (1µm pitch)<br> | |||
47.5% (2µm pitch)<br> | |||
50.0% (3µm pitch)<br> | |||
|<!--'''Profile angles'''--> | |||
86-89 | |||
|<!--'''Etch depth in SiO2'''--> | |||
280 nm (1µm pitch)<br> | |||
370 nm (2µm pitch)<br> | |||
|<!--'''Etch rate'''--> | |||
56 nm/min (1µm pitch)<br> | |||
74 nm/min (2µm pitch)<br> | |||
|<!--'''Etch depth in resist'''--> | |||
160nm | |||
|<!--'''Selectivity (resist:SiO2)'''--> | |||
1:1.8 (1µm pitch)<br> | |||
1:2.3 (2µm pitch)<br> | |||
|<!--'''Etch rate in Si'''--> | |||
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