Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions
| Line 29: | Line 29: | ||
! '''Etch rate in Si''' | ! '''Etch rate in Si''' | ||
|- | |- | ||
|-style="background:white; color:black" | |||
|s008684 | |||
|<!-- '''Mask material''' --> 880nm KRF | |||
|<!-- '''Barc etch''' --> barc etch CF 50s | |||
|<!-- '''Coil power''' --> 1000W | |||
|<!--'''Platen power'''--> 200W | |||
|<!--'''Pressure'''--> 2.5mTorr | |||
|<!--'''Flow rate C4F8'''--> 13sccm | |||
|<!--'''Flow rate H2'''--> 30sccm | |||
|<!--'''Flow rate Ar'''-->0 | |||
|<!--'''T'''--> 0 | |||
|<!--'''Process time'''--> 1:30min | |||
|<!--'''Comment'''--> The layer in this case is 300nm Si3N4 | |||
|<!--'''Results'''--> | |||
[[File:s008684_Si3N4_19.jpg|100px|frameless]] [[File:s008684_Si3N4_20.jpg|100px|frameless]] | |||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |||
trench opening as a fraction of pitch--> | |||
35% (1µm pitch)<br> | |||
47% (6µm pitch)<br> | |||
|<!--'''Profile angles'''--> | |||
83-88 | |||
|<!--'''Etch depth in SiO2'''--> | |||
|<!--'''Etch rate'''--> | |||
>300nm/min (Si3N4) | |||
|<!--'''Etch depth in resist'''--> | |||
240nm | |||
|<!--'''Selectivity (resist:SiO2)'''--> | |||
~1:2 (Si3N4) | |||
|<!--'''Etch rate in Si'''--> | |||
? | |||
|- | |||
|s006656 | |s006656 | ||
|<!-- '''Mask material''' --> 750nm KRF | |<!-- '''Mask material''' --> 750nm KRF | ||
| Line 62: | Line 97: | ||
|- | |- | ||
| | |s006106 | ||
|<!-- '''Mask material''' --> 750nm KRF | |||
|<!-- '''Mask material''' --> | |<!-- '''Barc etch''' --> Barc etch O2 75s | ||
|<!-- '''Barc etch''' --> | |<!-- '''Coil power''' --> 800W | ||
|<!-- '''Coil power''' --> | |<!--'''Platen power'''--> 150W | ||
|<!--'''Platen power'''--> | |||
|<!--'''Pressure'''--> 2.5mTorr | |<!--'''Pressure'''--> 2.5mTorr | ||
|<!--'''Flow rate C4F8'''--> | |<!--'''Flow rate C4F8'''--> 8sccm | ||
|<!--'''Flow rate H2'''--> 30sccm | |<!--'''Flow rate H2'''--> 30sccm | ||
|<!--'''Flow rate Ar'''-->0 | |<!--'''Flow rate Ar'''-->0 | ||
|<!--'''T'''--> 0 | |<!--'''T'''--> 0 | ||
|<!--'''Process time'''--> | |<!--'''Process time'''--> 10min | ||
|<!--'''Comment'''--> | |<!--'''Comment'''--> From Peixiong | ||
|<!--'''Results'''--> | |<!--'''Results'''--> | ||
[[File: | [[File:S0061066_n02.jpg|100px|frameless]] [[File:S006106_n04.jpg|100px|frameless]] | ||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | ||
trench opening as a fraction of pitch--> | trench opening as a fraction of pitch--> | ||
60% | |||
|<!--'''Profile angles'''--> | |<!--'''Profile angles'''--> | ||
79 | |||
|<!--'''Etch depth in SiO2'''--> | |<!--'''Etch depth in SiO2'''--> | ||
1053 nm (center)<br> | |||
1043 nm (edge)<br> | |||
|<!--'''Etch rate'''--> | |<!--'''Etch rate'''--> | ||
105 nm/min | |||
|<!--'''Etch depth in resist'''--> | |<!--'''Etch depth in resist'''--> | ||
280nm | |||
|<!--'''Selectivity (resist:SiO2)'''--> | |<!--'''Selectivity (resist:SiO2)'''--> | ||
1:3:75 (2µm pitch)<br> | |||
|<!--'''Etch rate in Si'''--> | |<!--'''Etch rate in Si'''--> | ||
|- | |- | ||
|} | |} | ||