Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions
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==CF4== | ==CF4== |
Revision as of 10:10, 2 June 2016
THIS PAGE IS UNDER CONSTRUCTION
I tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 instead.
C4F8
I started out with a recipe developed by Peixiong called pxSiO2try9, look at his results here
Parameter | Mask material | Barc etch | Coil power | Platen power | Pressure | Flow rate C4F8 | Flow rate H2 | Flow rate Ar | T | Process time | Comment | Results | CD change (mask 55% trench) after s007467 is it <50% after barc etch trench opening as a fraction of pitch |
Profile angles | Etch depth in SiO2 | Etch rate | Etch depth in resist | Selectivity (resist:SiO2) | Etch rate in Si |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
s008684 | 880nm KRF | barc etch CF 50s | 1000W | 200W | 2.5mTorr | 13sccm | 30sccm | 0 | 0 | 1:30min | The layer in this case is 300nm Si3N4 |
35% (1µm pitch) |
83-88 |
>300nm/min (Si3N4) |
240nm |
~1:2 (Si3N4) |
? |
CF4
I stopped trying with CF4 because I got bad selectivty to the resist and decided to focus on the recipe with C4F8 instead.
Parameter/Wafer ID | s006687 | s006701 | s007258 | s007350 | s007352 |
---|---|---|---|---|---|
Mask material | 750nm KRF | 750nm KRF | 750nm KRF | 750 nm KRF | 750nm KRF |
Barc etch | none | none | none | none | none |
Coil power | 800W | 800W | 800w | 800w | 800w |
Platen power | 100W | 100W | 100w | 60W | 30w |
Pressure | 4mTorr | 4mTorr | 4mTorr | 4mTorr | 4mTorr |
Flow rate CF4 | 20sccm | 25sccm | 30sccm | 30sccm | 30sccm |
Flow rate H2 | 20sccm | 15sccm | 10sccm | 10sccm | 10sccm |
T | 0 | 0 | 0 | 0 | 0 |
Process time | 10min | 10min | 2min30 | 2min30 | 3min30 |
Comment | Little resist left, Trenching | A little trenching | very little trenching in large lines - anti trenching in small lines | ||
Results | |||||
Etch depth in SiO2 | 374nm | 505nm | 578nm | 336nm | 235nm |
Etch rate | 37.4nm/min | 50.5nm/min | 231nm/min | 134.4nm/min | 88nm/min |
Etch depth in resist | 345nm | 633nm | 700nm | 405nm | 308nm |
Selectivity (resist:SiO2) | 1:1.1 | 1:0.80 | 1:0.83 | 1:0.83 | 1:0.76 |