Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions
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== Development of continuous nanoetch == | == Development of continuous nanoetch == | ||
The recipes below have been run on 2" wafers with 30/60/90/120/150 nm lines in zep resist. The wafers were crystalbonded to a 4" oxide carrier leaving only a very small fraction (much less than 1% )of silicon to be etched. | The recipes below have been run on 2" wafers with 30/60/90/120/150 nm lines in zep resist. The wafers were crystalbonded to a 4" oxide carrier leaving only a very small fraction (much less than 1% )of silicon to be etched. The most used one is the nano1.42 recipe - to access the results, click on the bold link in the bottom of the table. | ||
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|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14|Images]] | |[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14|Images]] | ||
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141|Images]] | |[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141|Images]] | ||
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142|Images]] | |'''[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142|Images]]''' | ||
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano143|Images]] | |[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano143|Images]] | ||
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