Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions
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THIS PAGE IS UNDER CONSTRUCTION
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{| border="1" cellspacing="1" cellpadding="2" align="left" | {| border="1" cellspacing="1" cellpadding="2" align="left" | ||
! Parameter | ! Parameter/Wafer ID | ||
! s006687 | ! s006687 | ||
! s006701 | ! s006701 |
Revision as of 15:54, 30 May 2016
THIS PAGE IS UNDER CONSTRUCTION![Under construction.png](/images/thumb/f/f8/Under_construction.png/200px-Under_construction.png.jpeg)
I tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 instead.
C4F8
CF4
I stopped trying with CF4 because I got bad selectivty to the resist and decided to focus on the recipe with C4F8 instead.
Parameter/Wafer ID | s006687 | s006701 | s007258 | s007350 | s007352 |
---|---|---|---|---|---|
Mask material | 750nm KRF | 750nm KRF | 750nm KRF | 750 nm KRF | 750nm KRF |
Barc etch | none | none | none | none | none |
Coil power | 800W | 800W | 800w | 800w | 800w |
Platen power | 100W | 100W | 100w | 60W | 30w |
Pressure | 4mTorr | 4mTorr | 4mTorr | 4mTorr | 4mTorr |
Flow rate CF4 | 20sccm | 25sccm | 30sccm | 30sccm | 30sccm |
Flow rate H2 | 20sccm | 15sccm | 10sccm | 10sccm | 10sccm |
T | 0 | 0 | 0 | 0 | 0 |
Process time | 10min | 10min | 2min30 | 2min30 | 3min30 |
Comment | Little resist left, Trenching | A little trenching | very little trenching in large lines - anti trenching in small lines | ||
Results | |||||
Etch depth in SiO2 | 374nm | 505nm | 578nm | 336nm | 235nm |
Etch rate | 37.4nm/min | 50.5nm/min | 231nm/min | 134.4nm/min | 88nm/min |
Etch depth in resist | 345nm | 633nm | 700nm | 405nm | 308nm |
Selectivity (resist:SiO2) | 1:1.1 | 1:0.80 | 1:0.83 | 1:0.83 | 1:0.76 |