Specific Process Knowledge/Thin film deposition/ALD Picosun R200/ALD multilayers: Difference between revisions
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Chemical taice analysis has been performed using [[Specific_Process_Knowledge/Characterization/XPS#XPS-ThermoScientific|XPS-ThermoScientific]] equipment in depth profile mode. | Chemical taice analysis has been performed using [[Specific_Process_Knowledge/Characterization/XPS#XPS-ThermoScientific|XPS-ThermoScientific]] equipment in depth profile mode. | ||
<gallery caption="" widths=" | <gallery caption="" widths="1000px" heights="1000px" perrow="1"> | ||
image:XPS_depth_multi_survey.JPG| Survey scan. | image:XPS_depth_multi_survey.JPG| Survey scan. | ||
</gallery> | </gallery> | ||
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<gallery caption="" widths="300px" heights="300px" perrow="4"> | <gallery caption="" widths="300px" heights="300px" perrow="4"> | ||
image: | image:XPS_depth_Al_10_AL.jpg| Al 2p signal multilayers. | ||
image:XPS_depth_Al_10_Ti.jpg| Ti 2p signal multilayers. | image:XPS_depth_Al_10_Ti.jpg| Ti 2p signal multilayers. | ||
image:XPS_depth_Al_10_O.jpg| O 1s signal multilayers. | image:XPS_depth_Al_10_O.jpg| O 1s signal multilayers. | ||