Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions
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*Al<sub>2</sub>O<sub>3</sub> | *Al<sub>2</sub>O<sub>3</sub> | ||
*TiO<sub>2</sub> | *TiO<sub>2</sub> | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance | ||
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*Al<sub>2</sub>O<sub>3</sub>: ~ 0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, depending on the temperature) | *Al<sub>2</sub>O<sub>3</sub>: ~ 0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, depending on the temperature) | ||
*TiO<sub>2</sub>: 0.04-0.05 nm/cycle | *TiO<sub>2</sub>: 0.04-0.05 nm/cycle (Using the "TiO2" recipe, depending on the temperature) | ||
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|style="background:LightGrey; color:black"|Thickness | |style="background:LightGrey; color:black"|Thickness | ||
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*Al<sub>2</sub>O<sub>3</sub>: 0 - 100 nm | *Al<sub>2</sub>O<sub>3</sub>: 0 - 100 nm | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range | ||
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*Al<sub>2</sub>O<sub>3</sub>: 150 - 350 <sup>o</sup>C | *Al<sub>2</sub>O<sub>3</sub>: 150 - 350 <sup>o</sup>C | ||
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|style="background:LightGrey; color:black"|Precursors | |style="background:LightGrey; color:black"|Precursors | ||
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*O<sub>3</sub> | *O<sub>3</sub> | ||
*O<sub>2</sub> | *O<sub>2</sub> | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | ||