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Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions

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*Al<sub>2</sub>O<sub>3</sub>
*Al<sub>2</sub>O<sub>3</sub>
*TiO<sub>2</sub>  
*TiO<sub>2</sub>  
*Pt (not tested yet)
Please note that it might not be possible to deposit all marials at the same time
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
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*Al<sub>2</sub>O<sub>3</sub>: ~ 0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, depending on the temperature)  
*Al<sub>2</sub>O<sub>3</sub>: ~ 0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, depending on the temperature)  
*TiO<sub>2</sub>: 0.04-0.05 nm/cycle
*TiO<sub>2</sub>: 0.04-0.05 nm/cycle (Using the "TiO2" recipe, depending on the temperature)
*Pt: Not measured
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|style="background:LightGrey; color:black"|Thickness
|style="background:LightGrey; color:black"|Thickness
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*Al<sub>2</sub>O<sub>3</sub>: 0 - 100 nm
*Al<sub>2</sub>O<sub>3</sub>: 0 - 100 nm
*TiO<sub>2</sub>: 0 - 100 nm
*Pt: (not tested)
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
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*Al<sub>2</sub>O<sub>3</sub>: 150 - 350 <sup>o</sup>C
*Al<sub>2</sub>O<sub>3</sub>: 150 - 350 <sup>o</sup>C
*TiO<sub>2</sub>: 150-350  <sup>o</sup>C
*Pt: (not tested)
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|style="background:LightGrey; color:black"|Precursors
|style="background:LightGrey; color:black"|Precursors
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*O<sub>3</sub>
*O<sub>3</sub>
*O<sub>2</sub>
*O<sub>2</sub>
*MeCpPtMe<sub>3</sub> (not mounted yet)
Please note that not all precursors might be mounted on the tool at the same time
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates