Specific Process Knowledge/Thin film deposition/ALD Picosun R200/ALD multilayers: Difference between revisions
Appearance
| Line 85: | Line 85: | ||
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%% | %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%% | ||
The uniformity, thickness, refractive index has been obtained using [[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer|Ellipsometer VASE]]. | |||
<gallery caption="" widths="500px" heights="500px" perrow="2"> | |||
image:Al2O3_LT_Thickness.JPG| Measured thickness distribution across 100 mm wafer. | |||
image:Al2O3_LT_RI.JPG| Measured refractive index distribution across 100 mm wafer. | |||
</gallery> | |||
==Low temperature deposition of TiO<sub>2</sub>== | ==Low temperature deposition of TiO<sub>2</sub>== | ||