Specific Process Knowledge/Thin film deposition/ALD Picosun R200/ALD multilayers: Difference between revisions

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<gallery caption="" widths="500px" heights="500px" perrow="2">
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image:Evgeniy Shkondin Si trenches coverd with Al2O3 and TiO2 multilayers using ALD.JPG| ALD-window for Al2O3 deposition.
image:Evgeniy Shkondin Si trenches coverd with Al2O3 and TiO2 multilayers using ALD.JPG| Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub> multilayers grown on silicon trenches.


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Revision as of 15:49, 19 May 2016

This page describes non standart recipes including multilayers structures.

Low temperature deposition of Al2O3

Recipe: Al2O3 LT

Temperature: 80-150 oC

TMA H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.1 s 0.2 s
Purge time 5.0 s 10.0 s

Deposition rate: 0.089 nm/cycle (@120 oC)

Low temperature deposition of TiO2

Recipe: TiO2 LT

Temperature: 80-150 oC

TiCl4 H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.2 s 0.2 s
Purge time 10.0 s 15.0 s

Deposition rate: 0.048 nm/cycle (@ 120 oC)

Low temperature grown multilayers on flat surfaces

Recipe: EMA01

Recipe: EMA02

Recipe: EMA03

Recipe: EMA04

Temperature: 120 oC

Al2O3/TiO2 multilayers on high aspect ratio structures

Recipe: Multi T

Temperature: 150 oC