Specific Process Knowledge/Thin film deposition/ALD Picosun R200/ALD multilayers: Difference between revisions
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image:Evgeniy Shkondin Si trenches coverd with Al2O3 and TiO2 multilayers using ALD.JPG| | image:Evgeniy Shkondin Si trenches coverd with Al2O3 and TiO2 multilayers using ALD.JPG| Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub> multilayers grown on silicon trenches. | ||
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Revision as of 15:49, 19 May 2016
This page describes non standart recipes including multilayers structures.
Low temperature deposition of Al2O3
Recipe: Al2O3 LT
Temperature: 80-150 oC
| TMA | H2O | |
|---|---|---|
| Nitrogen flow | 150 sccm | 200 sccm |
| Pulse time | 0.1 s | 0.2 s |
| Purge time | 5.0 s | 10.0 s |
Deposition rate: 0.089 nm/cycle (@120 oC)
Low temperature deposition of TiO2
Recipe: TiO2 LT
Temperature: 80-150 oC
| TiCl4 | H2O | |
|---|---|---|
| Nitrogen flow | 150 sccm | 200 sccm |
| Pulse time | 0.2 s | 0.2 s |
| Purge time | 10.0 s | 15.0 s |
Deposition rate: 0.048 nm/cycle (@ 120 oC)
Low temperature grown multilayers on flat surfaces
Recipe: EMA01
Recipe: EMA02
Recipe: EMA03
Recipe: EMA04
Temperature: 120 oC
Al2O3/TiO2 multilayers on high aspect ratio structures
Recipe: Multi T
Temperature: 150 oC
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Al2O3/TiO2 multilayers grown on silicon trenches.
